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STM32H753II датащи(PDF) 26 Page - STMicroelectronics |
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STM32H753II датащи(HTML) 26 Page - STMicroelectronics |
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26 / 361 page ![]() Functional overview STM32H753xI 26/360 DS12117 Rev 8 The boot loader is located in non-user System memory. It is used to reprogram the Flash memory through a serial interface (USART, I2C, SPI, USB-DFU). Refer to STM32 microcontroller System memory Boot mode application note (AN2606) for details. 3.5 Power supply management 3.5.1 Power supply scheme STM32H53xI power supply voltages are the following: • VDD = 1.62 to 3.6 V: external power supply for I/Os, provided externally through VDD pins. • VDDLDO = 1.62 to 3.6 V: supply voltage for the internal regulator supplying VCORE • VDDA = 1.62 to 3.6 V: external analog power supplies for ADC, DAC, COMP and OPAMP. • VDD33USB and VDD50USB: VDD50USB can be supplied through the USB cable to generate the VDD33USB via the USB internal regulator. This allows supporting a VDD supply different from 3.3 V. The USB regulator can be bypassed to supply directly VDD33USB if VDD = 3.3 V. • VBAT = 1.2 to 3.6 V: power supply for the VSW domain when VDD is not present. • VCAP: VCORE supply voltage, which values depend on voltage scaling (1.0 V, 1.1 V, 1.2 V or 1.35 V). They are configured through VOS bits in PWR_D3CR register and ODEN bit in the SYSCFG_PWRCR register. The VCORE domain is split into the following power domains that can be independently switch off. – D1 domain containing some peripherals and the Cortex®-M7 core. – D2 domain containing a large part of the peripherals. – D3 domain containing some peripherals and the system control. During power-up and power-down phases, the following power sequence requirements must be respected (see Figure 2): • When VDD is below 1 V, other power supplies (VDDA, VDD33USB, VDD50USB) must remain below VDD + 300 mV. • When VDD is above 1 V, all power supplies are independent. During the power-down phase, VDD can temporarily become lower than other supplies only if the energy provided to the microcontroller remains below 1 mJ. This allows external decoupling capacitors to be discharged with different time constants during the power-down transient phase. |
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