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STM32H753II датащи(PDF) 131 Page - STMicroelectronics |
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STM32H753II датащи(HTML) 131 Page - STMicroelectronics |
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131 / 361 page ![]() DS12117 Rev 8 131/360 STM32H753xI Electrical characteristics (rev Y) 318 6.3.11 Memory characteristics Flash memory The characteristics are given at TJ = –40 to 125 °C unless otherwise specified. The devices are shipped to customers with the Flash memory erased. Jitter Cycle-to-cycle jitter(3) - VCO = 150 MHz -145 - +/- ps VCO = 300 MHz -91 - VCO = 400 MHz -64 - VCO = 420 MHz -63 - Period jitter fPLL_OUT = 50 MHz VCO = 150 MHz -55 - +/- ps VCO = 400 MHz -30 - Long term jitter Normal mode VCO = 150 MHz -- - % VCO = 300 MHz -- - VCO = 400 MHz -+/-0.3 - I(PLL)(2) PLL power consumption on VDD VCO freq = 420MHz VDD - 440 1150 µA VCORE - 530 - VCO freq = 150MHz VDD - 180 500 VCORE - 200 - 1. Guaranteed by design unless otherwise specified. 2. Guaranteed by characterization results. 3. Integer mode only. Table 50. PLL characteristics (medium VCO frequency range)(1) (continued) Symbol Parameter Conditions Min Typ Max Unit Table 51. Flash memory characteristics Symbol Parameter Conditions Min Typ Max Unit IDD Supply current Write / Erase 8-bit mode - 6.5 - mA Write / Erase 16-bit mode - 11.5 - Write / Erase 32-bit mode - 20 - Write / Erase 64-bit mode - 35 - |
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