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STM32H753II датащи(PDF) 129 Page - STMicroelectronics |
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STM32H753II датащи(HTML) 129 Page - STMicroelectronics |
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129 / 361 page ![]() DS12117 Rev 8 129/360 STM32H753xI Electrical characteristics (rev Y) 318 Low-speed internal (LSI) RC oscillator 6.3.10 PLL characteristics The parameters given in Table 49 are derived from tests performed under temperature and VDD supply voltage conditions summarized in Table 23: General operating conditions. ∆TEMP (CSI) CSI oscillator frequency drift over temperature TJ = 0 to 85 °C - −3.7(3) 4.5(3) % TJ = −40 to 125 °C - −11(3) 7.5(3) DVDD (CSI) CSI oscillator frequency drift over VDD VDD = 1.62 to 3.6 V - − 0.06 0.06 % tsu(CSI) CSI oscillator startup time - - 1 2 µs tstab(CSI) CSI oscillator stabilization time (to reach ±3% of fCSI) - - 4 8 cycle IDD(CSI) CSI oscillator power consumption - - 23 30 µA 1. Guaranteed by design. 2. Guaranteed by test in production. 3. Guaranteed by characterization. Table 47. CSI oscillator characteristics(1) (continued) Symbol Parameter Conditions Min Typ Max Unit Table 48. LSI oscillator characteristics Symbol Parameter Conditions Min Typ Max Unit fLSI(1) 1. Guaranteed by characterization results. LSI frequency VDD = 3.3 V, TJ = 25 °C 31.4 32 32.6 kHz TJ = –40 to 105 °C, VDD = 1.62 to 3.6 V 29.76 - 33.60 tsu(LSI)(2) 2. Guaranteed by design. LSI oscillator startup time - - 80 130 µs tstab(LSI)(2) LSI oscillator stabilization time (5% of final value) - - 120 170 IDD(LSI)(2) LSI oscillator power consumption - - 130 280 nA Table 49. PLL characteristics (wide VCO frequency range)(1) Symbol Parameter Conditions Min Typ Max Unit fPLL_IN PLL input clock - 2 - 16 MHz PLL input clock duty cycle - 10 - 90 % |
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