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STM32H753II датащи(PDF) 113 Page - STMicroelectronics |
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STM32H753II датащи(HTML) 113 Page - STMicroelectronics |
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113 / 361 page ![]() DS12117 Rev 8 113/360 STM32H753xI Electrical characteristics (rev Y) 318 Table 35. Typical and maximum current consumption in Stop mode, regulator ON Symbol Parameter Conditions Typ Max(1) unit TJ = 25°C TJ = 85°C TJ = 105°C TJ = 125°C IDD(Stop) D1Stop, D2Stop, D3Stop Flash memory in low-power mode, no IWDG SVOS5 1.4 7.2(2) 49 75(2) 140 mA SVOS4 1.95 11 66 110 200 SVOS3 2.85 16(2) 91 150(2) 240 Flash memory ON, no IWDG SVOS5 1.65 7.2 49 75 140 SVOS4 2.2 11 66 110 180 SVOS3 3.15 16 91 150 300 D1Stop, D2Standby, D3Stop Flash memory OFF, no IWDG SVOS5 0.99 5.1 35 60 97 SVOS4 1.4 7.5 47 79 130 SVOS3 2.05 12 64 110 170 Flash memory ON, no IWDG SVOS5 1.25 5.5 35 61 98 SVOS4 1.65 7.8 47 80 130 SVOS3 2.3 12 65 110 170 D1Standby, D2Stop, D3Stop Flash OFF, no IWDG SVOS5 0.57 3 21 36 57 SVOS4 0.805 4.5 27 47 74 SVOS3 1.2 6.7 37 63 99 D1Standby, D2Standby, D3Stop SVOS5 0.17 1.1(2) 813(2) 20 SVOS4 0.245 1.5 11 17 26 SVOS3 0.405 2.4(2) 15 23(2) 35 1. Guaranteed by characterization results. 2. Guaranteed by test in production. Table 36. Typical and maximum current consumption in Standby mode Symbol Parameter Conditions Typ(3) Max (3 V)(1) Unit Backup SRAM RTC & LSE 1.62 V 2.4 V 3 V 3.3 V TJ = 25°C TJ = 85°C TJ = 105°C TJ = 125°C IDD (Standby) Supply current in Standby mode OFF OFF 1.8 1.9 1.95 2.05 4(2) 18(3) 40(2) 90(3) µA ON OFF 3.4 3.4 3.5 3.7 8.2(3) 47(3) 83(3) 141(3) OFF ON 2.4 3.5 3.86 4.12 - - - - ON ON 3.95 5.1 5.46 5.97 - - - - 1. The maximum current consumption values are given for PDR OFF (internal reset OFF). When the PDR is OFF (internal reset OFF), the current consumption is reduced by 1.2 µA compared to PDR ON. 2. Guaranteed by test in production. 3. Guaranteed by characterization results. |
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