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FDMS3604S датащи(PDF) 2 Page - ON Semiconductor

номер детали FDMS3604S
подробное описание детали  MOSFET – N-Channel, POWERTRENCH, Power Stage, Asymetric Dual
PDF  16 Pages
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производитель  ONSEMI [ON Semiconductor]
домашняя страница  http://www.onsemi.com
Logo ONSEMI - ON Semiconductor

FDMS3604S датащи(HTML) 2 Page - ON Semiconductor

  FDMS3604S Datasheet HTML 1Page - ON Semiconductor FDMS3604S Datasheet HTML 2Page - ON Semiconductor FDMS3604S Datasheet HTML 3Page - ON Semiconductor FDMS3604S Datasheet HTML 4Page - ON Semiconductor FDMS3604S Datasheet HTML 5Page - ON Semiconductor FDMS3604S Datasheet HTML 6Page - ON Semiconductor FDMS3604S Datasheet HTML 7Page - ON Semiconductor FDMS3604S Datasheet HTML 8Page - ON Semiconductor FDMS3604S Datasheet HTML 9Page - ON Semiconductor Next Button
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FDMS3604S
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MOSFET MAXIMUM RATINGS TA = 25°C Unless Otherwise Noted
Symbol
Parameter
Q1
Q2
Units
VDS
Drain to Source Voltage
30
30
V
VDSt
Drain to Source Transient Voltage ( tTransient < 100 ns)
33
33
V
VGS
Gate to Source Voltage (Note 3)
±20
±20
V
ID
Drain Current
−Continuous (Package limited)
TC = 25 °C
30
40
A
−Continuous (Silicon limited)
TC = 25 °C
60
130
−Continuous
TA = 25 °C
13 (Note 1a)
23 (Note 1b)
−Pulsed
40
100
EAS
Single Pulse Avalanche Energy
40 (Note 4)
60 (Note 5)
mJ
PD
Power Dissipation for Single Operation TA = 25 °C
2.2 (Note 1a)
2.5 (Note 1b)
W
Power Dissipation for Single Operation TA = 25 °C
1.0 (Note 1c)
1.0 (Note 1d)
TJ, TSTG
Operating and Storage Junction Temperature Range
−55 to +150
°C
THERMAL CHARACTERISTICS
Symbol
Parameter
Q1
Q2
Unit
RθJA
Thermal Resistance, Junction to Ambient
57 (Note 1a)
50 (Note 1b)
°C/W
RθJA
Thermal Resistance, Junction to Ambient
125 (Note 1c)
120 (Note 1d)
RθJC
Thermal Resistance, Junction to Case
3.5
2
PACKAGE MARKING AND ORDERING INFORMATION
Device Marking
Device
Package
Reel Size
Tape Width
Quantity
22CA N7CC
FDMS3604S
Power 56
13”
12 mm
3000 Units



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