© Semiconductor Components Industries, LLC, 2011

January, 2020 − Rev. 3

1

Publication Order Number:

FDMS3604S/D

FDMS3604S

MOSFET – N-Channel,

POWERTRENCH), Power

Stage, Asymetric Dual

General Description

This device includes two specialized N−Channel MOSFETs in a

dual PQFN package. The switch node has been internally connected to

enable easy placement and routing of synchronous buck converters.

The control MOSFET (Q1) and synchronous SyncFET

™ (Q2) have

been designed to provide optimal power efficiency.

Features

Q1: N−Channel

• Max rDS(on) = 8 mW at VGS = 10 V, ID = 13 A

• Max rDS(on) = 11 mW at VGS = 4.5 V, ID = 11 A

Q2: N−Channel

• Max rDS(on) = 2.6 mW at VGS = 10 V, ID = 23 A

• Max rDS(on) = 3.5 mW at VGS = 4.5 V, ID = 21 A

• Low Inductance Packaging Shortens Rise/Fall Times, Resulting in

Lower Switching Losses

• MOSFET Integration Enables Optimum Layout for Lower Circuit

Inductance and Reduced Switch Node Ringing

• This Device is Pb−Free and is RoHS Compliant

Applications

• Computing

• Communications

• General Purpose Point of Load

• Notebook VCORE

www.onsemi.com

MARKING DIAGRAM

PQFN8 5x6, 1.27P

CASE 483AJ

$Y

= ON Semiconductor Logo

&Z

= Assembly Plant Code

&3

= Numeric Date Code

&K

= Lot Code

22CA N7CC

= Specific Device Code

See detailed ordering and shipping information on page 2 of

this data sheet.

ORDERING INFORMATION

G1 D1

D1 D1

G2

S2

S2 S2

D1

PHASE

(S1/D2)

PIN CONFIGURATION

4

3

2

1

5

6

7

Q1

8

Q2

S2

S2

S2

G2

D1

D1

D1

G1

PHASE

$Y&Z&3&K

22CA

N7CC

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