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FDMS3604S датащи(PDF) 13 Page - ON Semiconductor |
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FDMS3604S датащи(HTML) 13 Page - ON Semiconductor |
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13 / 16 page ![]() FDMS3604S www.onsemi.com 13 higher−frequency operation this impedance can limit the gate current trying to charge the MOSFET input capacitance. This will result in slower rise and fall times and additional switching losses. Power Stage has both the gate pins on the same side of the package which allows for back mounting of the driver IC to the board. This provides a very compact path for the drive signals and improves efficiency of the part 6. S2 pins should be connected to the GND plane with multiple vias for a low impedance grounding. Poor grounding can create a noise transient offset voltage level between S2 and driver ground. This could lead to faulty operation of the gate driver and MOSFET 7. Use multiple vias on each copper area to interconnect top, inner and bottom layers to help smooth current flow and heat conduction. Vias should be relatively large, around 8 mils to 10 mils, and of reasonable inductance. Critical high frequency components such as ceramic bypass caps should be located close to the part and on the same side of the PCB. If not feasible, they should be connected from the backside via a network of low inductance vias SyncFET IS trademark of Semiconductor Components Industries, LLC (SCILLC) or its subsidiaries in the United States and/or other countries. POWERTRENCH is registered trademark of Semiconductor Components Industries, LLC (SCILLC) or its subsidiaries in the United States and/or other countries. |
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