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FDMS3604S датащи(PDF) 13 Page - ON Semiconductor

номер детали FDMS3604S
подробное описание детали  MOSFETN-Channel, POWERTRENCH, Power Stage, Asymetric Dual
PDF  16 Pages
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производитель  ONSEMI [ON Semiconductor]
домашняя страница  http://www.onsemi.com
Logo ONSEMI - ON Semiconductor

FDMS3604S датащи(HTML) 13 Page - ON Semiconductor

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FDMS3604S
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13
higher−frequency operation this impedance can
limit the gate current trying to charge the
MOSFET input capacitance. This will result in
slower rise and fall times and additional switching
losses. Power Stage has both the gate pins on the
same side of the package which allows for back
mounting of the driver IC to the board. This
provides a very compact path for the drive signals
and improves efficiency of the part
6. S2 pins should be connected to the GND plane
with multiple vias for a low impedance grounding.
Poor grounding can create a noise transient offset
voltage level between S2 and driver ground. This
could lead to faulty operation of the gate driver
and MOSFET
7. Use multiple vias on each copper area to
interconnect top, inner and bottom layers to help
smooth current flow and heat conduction. Vias
should be relatively large, around 8 mils to 10
mils, and of reasonable inductance. Critical high
frequency components such as ceramic bypass
caps should be located close to the part and on the
same side of the PCB. If not feasible, they should
be connected from the backside via a network of
low inductance vias
SyncFET IS trademark of Semiconductor Components Industries, LLC (SCILLC) or its subsidiaries in the United States and/or other countries.
POWERTRENCH is registered trademark of Semiconductor Components Industries, LLC (SCILLC) or its subsidiaries in the United States and/or other
countries.



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