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PM8805 датащи(PDF) 30 Page - STMicroelectronics

номер детали PM8805
подробное описание детали  IEEE 802.3bt PoE-PD interface with embedded dual active bridge
PDF  48 Pages
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производитель  STMICROELECTRONICS [STMicroelectronics]
домашняя страница  http://www.st.com
Logo STMICROELECTRONICS - STMicroelectronics

PM8805 датащи(HTML) 30 Page - STMicroelectronics

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DS12813 Rev 2
Figure 8. Simplified front aux connections
Connection of the auxiliary source prior to the internal hot swap MOSFET is preferred if
used as an alternative (or a backup) to PoE.
The main reason for this is because the priority of the front auxiliary over PoE cannot be
guaranteed in every condition, since it depends on the insertion sequence and the voltage
of the PoE line with respect to the auxiliary source.
In more detail, the front auxiliary takes priority over the PoE if:
1.The front aux voltage is higher than PoE voltage, or,
2.The front aux connector is plugged when PoE is not (or not yet) present.
If a PSE is already powering the PD, and the auxiliary voltage is lower than PoE, it doesn‘t
provide power until the PoE power is removed, acting as a backup power. The minimum
operating voltage for the front auxiliary connection is 15 V.
The switch from PoE line to front aux is a one way operation and to back to PoE is needed
to remove the front aux voltage and wait for a new detection and classification of PD on the
PoE line.
Using a front aux configuration, the charge of the output capacitors is controlled by the
internal current source, which is activated when the input voltage is above the UVLO_R
threshold or if the voltage on the FAUX pin is above FAUX_thr (1.25 V typ.). With FAUX=1,
the PGD signal is asserted - and the hot swap MOSFET activated - as soon as the inrush
phase is completed (VDS_good and VGS_good conditions met) with no PGD_delay.
This configuration has the advantage of limiting the inrush current when plugging the DC
jack, and the disadvantage of the power losses of the hot swap MOSFET.



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