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STGYA50M120DF3 датащи(PDF) 2 Page - STMicroelectronics

номер детали STGYA50M120DF3
подробное описание детали  Trench gate field-stop, 1200 V, 50 A, low-loss M series IGBT in a Max247 long leads package
PDF  15 Pages
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производитель  STMICROELECTRONICS [STMicroelectronics]
домашняя страница  http://www.st.com
Logo STMICROELECTRONICS - STMicroelectronics

STGYA50M120DF3 датащи(HTML) 2 Page - STMicroelectronics

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1
Electrical ratings
Table 1. Absolute maximum ratings
Symbol
Parameter
Value
Unit
VCES
Collector-emitter voltage (VGE = 0 V)
1200
V
IC
Continuous collector current at TC = 25 °C
100
A
Continuous collector current at TC = 100 °C
50
ICP(1)
Pulsed collector current
200
A
VGE
Gate-emitter voltage
±20
V
Transient gate-emitter voltage
±30
IF
Continuous forward current at TC = 25 °C
100
A
Continuous forward current at TC = 100 °C
50
IFP(1)
Pulsed forward current
200
A
PTOT
Total power dissipation at TC = 25 °C
535
W
TSTG
Storage temperature range
-55 to 150
°C
TJ
Operating junction temperature range
-55 to 175
°C
1. Pulse width is limited by maximum junction temperature.
Table 2. Thermal data
Symbol
Parameter
Value
Unit
RthJC
Thermal resistance, junction-to-case IGBT
0.28
°C/W
Thermal resistance, junction-to-case diode
0.48
RthJA
Thermal resistance, junction-to-ambient
50
°C/W
STGYA50M120DF3
Electrical ratings
DS13799 - Rev 2
page 2/15



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