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STGYA50M120DF3 датащи(PDF) 6 Page - STMicroelectronics

номер детали STGYA50M120DF3
подробное описание детали  Trench gate field-stop, 1200 V, 50 A, low-loss M series IGBT in a Max247 long leads package
PDF  15 Pages
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производитель  STMICROELECTRONICS [STMicroelectronics]
домашняя страница  http://www.st.com
Logo STMICROELECTRONICS - STMicroelectronics

STGYA50M120DF3 датащи(HTML) 6 Page - STMicroelectronics

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Figure 7. Collector current vs switching frequency
120
100
80
60
40
20
0
100
101
102
IC
(A)
f (kHz)
GADG270720211221CCS
Rectangular current shape,
duty cycle = 0.5,
VCC = 600 V, RG = 10 Ω,
VGE = 0 to 15 V, TJ = 175 °C
TC= 80 °C
TC= 100 °C
Figure 8. Safe operating area
GADG270720211154FSOA
10 2
10 1
10 0
10 0
10 1
10 2
10 3
IC
(A)
VCE (V)
tp =10 µs
tp =1 µs
tp =100 µs
tp =1 ms
TC = 25 °C,
TJ ≤ 175 °C,
VGE = 15 V,
Single pulse
Figure 9. Transfer characteristics
GADG270720211201TCH
150
100
50
0
4
6
8
10
12
IC
(A)
VGE (V)
TJ = 25 °C
TJ = 175 °C
VCE = 10 V
Figure 10. Diode VF vs forward current
GADG270720211202DVF
5
4
3
2
1
0
0
50
100
150
VF
(V)
IF (A)
TJ = -40 °C
TJ = 175 °C
TJ = 25 °C
Figure 11. Normalized VGE(th) vs junction temperature
VGE(th)
1.1
1.0
0.7
(norm)
-50
TJ (°C)
0
50
100
150
0.8
0.9
GIPD110920141203FSR
IC = 2 mA
VCE = VGE
Figure 12. Normalized V(BR)CES vs junction temperature
V(BR)CES
1.06
0.90
-50
TJ (°C)
(norm)
0
50
100
150
IC = 2 mA
0.94
0.92
0.96
0.98
1.02
1.04
1.00
GIPD110920141208FSR
STGYA50M120DF3
Electrical characteristics (curves)
DS13799 - Rev 2
page 6/15



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