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STGYA50M120DF3 датащи(PDF) 7 Page - STMicroelectronics

номер детали STGYA50M120DF3
подробное описание детали  Trench gate field-stop, 1200 V, 50 A, low-loss M series IGBT in a Max247 long leads package
PDF  15 Pages
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производитель  STMICROELECTRONICS [STMicroelectronics]
домашняя страница  http://www.st.com
Logo STMICROELECTRONICS - STMicroelectronics

STGYA50M120DF3 датащи(HTML) 7 Page - STMicroelectronics

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Figure 13. Capacitance variations
103
102
101
10-1
100
101
102
103
C
(pF)
VCE (V)
GADG270720211203CVR
f = 1 MHz
Cies
Coes
Cres
Figure 14. Gate charge vs gate-emitter voltage
GADG270720211203GCGE
15
12
9
6
3
0
0
40
80
120
160
200
VGE
(V)
Qg (nC)
VCC = 960 V, IC = 50 A,
IG = 17.7 mA
Figure 15. Switching energy vs collector current
GADG270720211208SLC
9
6
3
0
0
20
40
60
80
100
E
(mJ)
IC (A)
VGE = 15 V, TJ = 175
℃
6
10
Eon
Eoff
Figure 16. Switching energy vs gate resistance
GADG270720211209SLG
6
5
4
3
2
0
5
10
15
20
E
(mJ)
RG (Ω)
Eon
Eoff
TJ = 175
℃, VGE = 15 V
IC = 50 A,
6
Figure 17. Switching energy vs junction temperature
GADG270720211208SLT
5
4
3
2
1
0
50
100
150
E
(mJ)
TJ (°C)
Eon
Eoff
RG = 10 Ω, VGE = 15 V
IC = 50 A,
6
Figure 18. Switching energy vs collector emitter voltage
GADG270720211209SLV
6
5
4
3
2
1
350
450
550
650
750
850
E
(mJ)
VCE (V)
Eon
Eoff
VGE= 15 V, TJ = 175
℃
IC = 50 A, RG = 10 Ω,
STGYA50M120DF3
Electrical characteristics (curves)
DS13799 - Rev 2
page 7/15



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