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STGYA50M120DF3 датащи(PDF) 1 Page - STMicroelectronics |
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STGYA50M120DF3 датащи(HTML) 1 Page - STMicroelectronics |
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1 / 15 page ![]() Max247 long leads TAB 1 2 3 1 2 3 TAB C(2, TAB) E(3) NG1E3C2T G(1) Features • Maximum junction temperature: TJ = 175 °C • 10 μs of short-circuit withstand time • Low VCE(sat) = 1.7 V (typ.) @ IC = 50 A • Tight parameter distribution • Positive VCE(sat) temperature coefficient • Low thermal resistance • Soft- and fast-recovery antiparallel diode Applications • Industrial drives • UPS • Solar inverters • General purpose inverter Description This device is an IGBT developed using an advanced proprietary trench gate field- stop structure. The device is part of the M series IGBTs, which represent an optimal balance between inverter system performance and efficiency where the low-loss and the short-circuit functionality is essential. Furthermore, the positive VCE(sat) temperature coefficient and the tight parameter distribution result in safer paralleling operation. Product status link STGYA50M120DF3 Product summary Order code STGYA50M120DF3 Marking G50M120DF3 Package Max247 long leads Packing Tube Trench gate field-stop, 1200 V, 50 A, low-loss M series IGBT in a Max247 long leads package STGYA50M120DF3 Datasheet DS13799 - Rev 2 - October 2021 For further information contact your local STMicroelectronics sales office. www.st.com |
Аналогичный номер детали - STGYA50M120DF3 |
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Аналогичное описание - STGYA50M120DF3 |
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