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NAND01G-B2C

Device operations

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Device operations

The following section gives the details of the device operations.

6.1

Read memory array

At power-up the device defaults to read mode. To enter read mode from another mode the

Read command must be issued, see Table 10: Commands.

Once a Read command is issued two types of operations are available: random read and

page read.

6.1.1

Random read

Each time the Read command is issued the first read is random read.

6.1.2

Page read

After the first random read access, the page data (2112 bytes or 1056 words) is transferred

to the page buffer in a time of tWHBH (refer to Table 25 for value). Once the transfer is

complete the Ready/Busy signal goes High. The data can then be read out sequentially

(from selected column address to last column address) by pulsing the Read Enable signal.

Alternatively, the user may check the transfer completion by issuing the Read Status

on outputting the read status register until the 00h command is issued.

The device can output random data in a page, instead of the consecutive sequential data, by

issuing a Random Data Output command.

The Random Data Output command can be used to skip some data during a sequential

data output.

The sequential operation can be resumed by changing the column address of the next data

to be output, to the address which follows the Random Data Output command.

The Random Data Output command can be issued as many times as required within a

page.

The Random Data Output command is not accepted during cache read operations.

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