NAND01G-B2C datasheet(13/67 Pages) NUMONYX

номер детали	NAND01G-B2C

подробное описание детали	1-Gbit, 2112-byte/1056-word page, 1.8 V/3 V, single level cell NAND flash memory

PDF	67 Pages

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производитель	NUMONYX [Numonyx B.V]

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NAND01G-B2C

Memory array organization

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Memory array organization

The memory array is made up of two NAND structures where 32 cells are connected in

series.

The memory array is organized in blocks where each block contains 64 pages. The array is

split into two areas, the main area and the spare area. The main area of the array is used to

store data whereas the spare area is typically used to store error correction codes, software

flags or bad block identification.

In x8 devices the pages are split into a 2048-byte main area and a spare area of 64 bytes. In

the x16 devices the pages are split into a 1024-word main area and a 32-word spare area.

Refer to Figure 6: Memory array organization.

2.1

Bad blocks

The NAND flash 2112-byte/1056-word page devices may contain bad blocks, that is blocks

that contain one or more invalid bits whose reliability is not guaranteed. Additional bad

blocks may develop during the lifetime of the device.

The bad block Information is written prior to shipping (refer to Section 8.1: Bad block

management for more details).

Table 4: Valid blocks shows the minimum number of valid blocks in the device. The values

shown include both the bad blocks that are present when the device is shipped and the bad

blocks that could develop later on.

These blocks need to be managed using bad blocks management, block replacement or

error correction codes (refer to Section 8: Software algorithms).

Table 4.

Valid blocks

Density of device

Min

Max

1 Gbit

1004

1024

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