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NAND01G-B2C датащи(PDF) 49 Page - Numonyx B.V

номер детали NAND01G-B2C
подробное описание детали  1-Gbit, 2112-byte/1056-word page, 1.8 V/3 V, single level cell NAND flash memory
PDF  67 Pages
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производитель  NUMONYX [Numonyx B.V]
домашняя страница  http://www.numonyx.com
Logo NUMONYX - Numonyx B.V

NAND01G-B2C датащи(HTML) 49 Page - Numonyx B.V

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NAND01G-B2C
DC and AC parameters
49/67
Table 22.
DC characteristics, 1.8 V devices
Symbol
Parameter
Test conditions
Min
Typ
Max
Unit
IDD1
Operating current
Sequential
read
tRLRL minimum
E = VIL, IOUT = 0 mA
–10
20
mA
IDD2
Program
–
–
10
20
mA
IDD3
Erase
–
–
10
20
mA
IDD5
Standby current (CMOS)(1)
E = VDD – 0.2,
WP = 0/VDD
–
10
50
µA
ILI
Input leakage current(1)
VIN = 0 to VDDmax
–
–
±10
µA
ILO
Output leakage current(1)
VOUT = 0 to VDDmax
–
–
±10
µA
VIH
Input high voltage
–
0.8xVDD
–
VDD +0.3
V
VIL
Input low voltage
–
-0.3
–
0.2xVDD
V
VOH
Output high voltage level
IOH = –100 µA
VDD -0.1
–
–
V
VOL
Output low voltage level
IOL = 100 µA
–
–
0.1
V
IOL (RB)
Output low current (RB)
VOL = 0.1 V
3
4
mA
VLKO
VDD supply voltage (erase and
program lockout)
–
–
1.1
V
1.
Leakage current and standby current double in stacked devices.
Table 23.
DC characteristics, 3 V devices
Symbol
Parameter
Test conditions
Min
Typ
Max
Unit
IDD1
Operating current
Sequential
Read
tRLRL minimum
E =VIL, IOUT =0mA
–15
30
mA
IDD2
Program
–
–15
30
mA
IDD3
Erase
–
–15
30
mA
IDD4
Standby current (TTL)(1)
E =VIH, WP =0/VDD
1
mA
IDD5
Standby current (CMOS)(1)
E = VDD – 0.2,
WP = 0/VDD
–
10
50
µA
ILI
Input leakage current(1)
VIN = 0 to VDDmax
–
–
±10
µA
ILO
Output leakage current(1)
VOUT = 0 to VDDmax
–
–
±10
µA
VIH
Input high voltage
–
0.8xVDD
–
VDD +0.3
V
VIL
Input low voltage
–
-0.3
–
0.2xVDD
V
VOH
Output high voltage level
IOH =–400µA
2.4
–
–
V
VOL
Output low voltage level
IOL =2.1 mA
–
–
0.4
V
IOL (RB)
Output low current (RB)
VOL =0.4 V
8
10
mA
VLKO
VDD supply voltage (erase and
program lockout)
–
–
1.8
V
1.
Leakage current and standby current double in stacked devices.



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