AMT49106 datasheet(13/74 Pages) ALLEGRO

13 / 74 page

Automotive Three-Phase MOSFET Driver

AMT49106

Allegro MicroSystems

955 Perimeter Road

Manchester, NH 03103-3353 U.S.A.

www.allegromicro.com

ELECTRICAL CHARACTERISTICS (continued): Valid at TJ = –40°C to 150°C, VBB = 4.5 to 50 V, unless otherwise specified

Characteristic

Symbol

Test Conditions

Min.

Typ.

Max.

Unit

Off-State Test Sink Current

ISD

YPS = 3, V(Sx) = 3 V

1.25

2.5

3.77

Off-State Test Source Current

ISU

YSC = 0, V(Sx) = 1 V

–120

–90

–50

µA

YSC = 1, V(Sx) = 1 V

–460

–410

–300

µA

[1]

No internal reset.

[2]

For input and output current specifications, negative current is defined as coming out of (being sourced by) the specified device terminal.

[3]

VDS offset is the difference between the programmed threshold, VDSTH or VDSTL and the actual trip voltage.

[4]

For DT[5:0] > 0, jitter of ±25 ns must be added to the limits shown.

[5]

If the amplifier output voltage (VCSO) is more positive than the value demanded by the applied differential input (VID) and output offset (VOOS)

conditions, output current sink capability is boosted to enhance negative going transient response.

[6]

Maximum value of VDS threshold that should be set in the configuration registers for correct operation when VBB is within the stated range.

[7]

VIN is voltage from relevant terminal with respect to GND.

[8]

VCP refers to the voltage on the VCP terminal with respect to the voltage on the VBB terminal. VVCP refers to the voltage on the VCP terminal with

respect to the device GND pin.

[9]

Confirmed by design.

[10]

VDD derived from VIO for internal use only. Not accessible on any device terminal.

[11]

Confirmed by characterization. Not production tested.

[12]

Strobe high time values apply after serial interface frames addressing the registers listed in the test conditions column.

[13]

Stated values confirmed by design and characterization (not production-tested) Associated function production-tested.

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