FUSB3317 datasheet(7/16 Pages) ONSEMI

7 / 16 page

FUSB3317

www.onsemi.com

ELECTRICAL CHARACTERISTICS (continued)

For typical values, VVVBAT = 12 V and TA = 25°C. For min/max values, VVVBAT = 5.5 V to 36 V and TJ = −40°C to 125°C; unless otherwise

noted.

Parameter

Unit

Max

Typ

Min

Symbol

Test Conditions

Over Current Protection (OCP) Sensing Section

Over Current Protection (OCP) threshold

percentage of maximum current

PD request for constant voltage

mode with VBUS at 5.2 V and 3 A

maximum current

IOCP*PER

109

120

124

OCP debounce time

Constant current exceeding

IOCP*PER

tOCP*DEB

Current threshold on sensing resistor for

enabling discharge on DISC pin during a

voltage transition

VBUS is decreasing

ICS*DSCG

430

Debounce time for enabling discharge on

DISC pin during a voltage transition

VBUS is decreasing

tCS*DSCG

0.6

1.0

Constant Voltage Sensing Section

VFB Reference Voltage at 3.3 V

VBUS = 3.3 V, current sense resistor

voltage, Vcs = 0 V

VCVR−3.3V

0.32

0.33

0.34

VFB Reference Voltage at 5.2 V nominal

output voltage

VBUS = 5.2 V, current sense resistor

voltage, Vcs = 0 V

VCVR−5V

0.504

0.520

0.536

VFB Reference Voltage at 9 V nominal

output voltage

VBUS = 9 V, current sense resistor

voltage, Vcs = 0 V

VCVR−9V

0.873

0.900

0.927

VFB Reference Voltage at 15 V nominal

output voltage

VBUS = 15 V, current sense resistor

voltage, Vcs = 0 V

VCVR−15V

1.455

1.500

1.545

VFB Reference Voltage at 20 V nominal

output voltage

VBUS = 20 V, current sense resistor

voltage, Vcs = 0 V

VCVR−20V

1.940

2.000

2.060

Feedback Section

CATH(FB) pin sink/source current (Note 5)

CATH(FB) as a sink (Note 6)

ICATH−SNK

CATH(FB) pin sink/source current (Note 5)

CATH(FB) as a source (Note 6)

IFB−SRC

−2

Discharge Section

VBUS to GND Leakage Resistance

DC_EN = 0 V, VBUS not sourced

RDISC−VBUS

72.4

155

VBUS Pin Sink Current

VBUS = 20 V and being discharged

IDISC−SNK

250

Discharge Time

During VBUS voltage transition of

voltage step v 0.5 V,

final VVBUS > 13 V

tDISC−11

5.5

8.5

Discharge Time

During VBUS voltage transition of

voltage step v 0.5 V,

final VVBUS < 13 V

tDISC−10

Discharge Time

During VBUS voltage transition of

voltage step > 0.5 V,

final VVBUS > 13 V

tDISC−01

16.5

21.5

Discharge Time

During VBUS voltage transition of

voltage step > 0.5 V,

final VVBUS < 13 V

tDISC−00

205.5

221

236.5

Over Temperature Protection (OTP) Section

Current Source on NTC Pin

Resistance to ground on NTC =

3.293 kW

INTC

Debounce Time for External Over Temper-

ature Protection (E_OTP)

Over temperature event

tNTC−DEB

Over Temperature Warning Threshold on

NTC pin at 100°C (Note 8)

Resistance to ground on NTC =

4.247 kW

VNTC−WARN

0.234

0.256

0.276

Over Temperature Protection Threshold on

NTC pin at 100°C (Note 8)

Resistance to ground on NTC =

3.293 kW

VNTC−OTP

0.181

0.198

0.214

Internal Over Temperature Protection

(I_OTP) Threshold (Note 8)

TI_OTP

135

°C

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