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поискавой системы для электроныых деталей |
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поискавой системы для электроныых деталей |
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STM32L031C6 датащи(PDF) 80 Page - STMicroelectronics |
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STM32L031C6 датащи(HTML) 80 Page - STMicroelectronics |
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80 / 126 page  Electrical characteristics STM32L031x4/6 80/126 DS10668 Rev 6 6.3.13 I/O port characteristics General input/output characteristics Unless otherwise specified, the parameters given in Table 53 are derived from tests performed under the conditions summarized in Table 20. All I/Os are CMOS and TTL compliant. Table 53. I/O static characteristics Symbol Parameter Conditions Min Typ Max Unit VIL Input low level voltage TC, FT, FTf, RST I/Os - - 0.3VDD V BOOT0 pin - - 0.14VDD(1) VIH Input high level voltage All I/Os 0.7 VDD -- Vhys I/O Schmitt trigger voltage hysteresis (2) Standard I/Os - 10% VDD(3) - BOOT0 pin - 0.01 - Ilkg Input leakage current (4) VSS ≤VIN ≤VDD All I/Os except PA11, PA12, BOOT0 and FTf I/Os -- ±50 nA VSS ≤VIN ≤VDD PA11 and P12 I/Os - - –50/+250 VSS ≤VIN ≤VDD FTf I/Os - - ±100 VDD≤VIN ≤5V All I/Os except for PA11, PA12, BOOT0 and FTf I/Os -- 200 VDD≤VIN ≤5V FTf I/Os -- 500 VDD≤VIN ≤5V PA11, PA12 and BOOT0 - - 10 µA RPU Weak pull-up equivalent resistor(5) VIN = VSS 25 45 65 k Ω RPD Weak pull-down equivalent resistor(5) VIN = VDD 25 45 65 k Ω CIO I/O pin capacitance - - 5 - pF 1. Guaranteed by characterization. 2. Hysteresis voltage between Schmitt trigger switching levels. Guaranteed by characterization results. 3. With a minimum of 200 mV. Guaranteed by characterization results. 4. The max. value may be exceeded if negative current is injected on adjacent pins. 5. Pull-up and pull-down resistors are designed with a true resistance in series with a switchable PMOS/NMOS. This MOS/NMOS contribution to the series resistance is minimum (~10% order). |
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