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поискавой системы для электроныых деталей |
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поискавой системы для электроныых деталей |
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STW70N60DM6 датащи(PDF) 4 Page - STMicroelectronics |
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STW70N60DM6 датащи(HTML) 4 Page - STMicroelectronics |
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4 / 14 page  Table 7. Source drain diode Symbol Parameter Test conditions Min. Typ. Max. Unit ISD Source-drain current - 62 A ISDM(1) Source-drain current (pulsed) - 220 A VSD(2) Forward on voltage VGS = 0 V, ISD = 62 A - 1.6 V trr Reverse recovery time ISD = 62 A, di/dt = 100 A/μs, VDD = 60 V (see Figure 15. Test circuit for inductive load switching and diode recovery times) - 138 - ns Qrr Reverse recovery charge - 0.69 - µC IRRM Reverse recovery current - 10 - A trr Reverse recovery time ISD = 62 A, di/dt = 100 A/μs, VDD = 60 V, TJ = 150 °C (see Figure 15. Test circuit for inductive load switching and diode recovery times) - 340 - ns Qrr Reverse recovery charge - 4.6 - µC IRRM Reverse recovery current - 27 - A 1. Pulse width is limited by safe operating area 2. Pulsed: pulse duration = 300 μs, duty cycle 1.5% STW70N60DM6, STWA70N60DM6 Electrical characteristics DS12274 - Rev 4 page 4/14 |
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