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STW70N60DM6 датащи(PDF) 2 Page - STMicroelectronics

номер детали STW70N60DM6
подробное описание детали  N-channel 600 V, 36 mΩ typ., 62 A, MDmesh DM6 Power MOSFETs in TO-247 and TO-247 long leads packages
PDF  14 Pages
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производитель  STMICROELECTRONICS [STMicroelectronics]
домашняя страница  http://www.st.com
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STW70N60DM6 датащи(HTML) 2 Page - STMicroelectronics

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1
Electrical ratings
Table 1. Absolute maximum ratings
Symbol
Parameter
Value
Unit
VGS
Gate-source voltage
±25
V
ID
Drain current (continuous) at TC = 25 °C
62
A
ID
Drain current (continuous) at TC = 100 °C
39
A
ID(1)
Drain current (pulsed)
220
A
PTOT
Total power dissipation at TC = 25 °C
390
W
dv/dt(2)
Peak diode recovery voltage slope
100
V/ns
di/dt(2)
Peak diode recovery current slope
1000
A/µs
dv/dt(3)
MOSFET dv/dt ruggedness
100
V/ns
TSTG
Storage temperature range
-55 to 150
°C
TJ
Operating junction temperature range
°C
1. Pulse width is limited by safe operating area.
2. ISD ≤ 25 A, VDS(peak) < V(BR)DSS, VDD = 400 V
3. VDS ≤ 480 V
Table 2. Thermal data
Symbol
Parameter
Value
Unit
Rthj-case
Thermal resistance junction-case
0.32
°C/W
Rthj-amb
Thermal resistance junction-ambient
50
°C/W
Table 3. Avalanche characteristics
Symbol
Parameter
Value
Unit
IAR
Avalanche current, repetitive or not repetitive (pulse width limited by Tjmax)
7
A
EAS
Single pulse avalanche energy (starting Tj = 25 °C, ID = IAR, VDD = 50 V)
1850
mJ
STW70N60DM6, STWA70N60DM6
Electrical ratings
DS12274 - Rev 4
page 2/14



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