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STW70N60DM6 датащи(PDF) 5 Page - STMicroelectronics

номер детали STW70N60DM6
подробное описание детали  N-channel 600 V, 36 mΩ typ., 62 A, MDmesh DM6 Power MOSFETs in TO-247 and TO-247 long leads packages
PDF  14 Pages
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производитель  STMICROELECTRONICS [STMicroelectronics]
домашняя страница  http://www.st.com
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STW70N60DM6 датащи(HTML) 5 Page - STMicroelectronics

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2.1
Electrical characteristics (curves)
Figure 1. Safe operating area
GADG081020181656SOA
10 2
10 1
10 0
10 -1
10 -2
10 -1
10 0
10 1
10 2
ID
(A)
VDS (V)
tp =10 µs
tp =100 µs
tp =1 ms
tp =10 ms
Operation in this area
is limited by RDS(on)
Single pulse, TC = 25 °C,
TJ ≤ 150 °C, VGS = 10 V
Figure 2. Thermal impedance
10
-4
10
-3
10
-2
10
-1
tp(s)
10
-2
10
-1
K
0.2
0.05
0.02
0.01
0.1
Single pulse
d=0.5
Zth=k *Rthj-c
d=tp/t
tp
t
AM09125v1
Figure 3. Output characteristics
GADG081020181655OCH
200
160
120
80
40
0
0
4
8
12
16
ID
(A)
VDS (V)
VGS = 5 V
VGS = 6 V
VGS = 7 V
VGS = 8 V
VGS = 9, 10 V
Figure 4. Transfer characteristics
GADG081020181655TCH
200
160
120
80
40
0
4
5
6
7
8
9
ID
(A)
VGS (V)
VDS = 18 V
Figure 5. Gate charge vs gate-source voltage
GADG081020181656QVG
600
500
400
300
200
100
0
12
10
8
6
4
2
0
0
20
40
60
80
100 120
VDS
(V)
VGS
(V)
Qg (nC)
VDS
VDD = 480 V,
ID = 62 A
Figure 6. Static drain-source on-resistance
GADG081020181654RID
39
38
37
36
35
34
33
0
10
20
30
40
50
60
RDS(on)
(mΩ)
ID (A)
VGS = 10 V
STW70N60DM6, STWA70N60DM6
Electrical characteristics (curves)
DS12274 - Rev 4
page 5/14



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