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поискавой системы для электроныых деталей |
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поискавой системы для электроныых деталей |
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STM8L052C6 датащи(PDF) 96 Page - STMicroelectronics |
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STM8L052C6 датащи(HTML) 96 Page - STMicroelectronics |
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96 / 103 page  Electrical parameters STM8L052C6 96/103 DocID023331 Rev 2 Electromagnetic interference (EMI) Based on a simple application running on the product (toggling 2 LEDs through the I/O ports), the product is monitored in terms of emission. This emission test is in line with the norm IEC61967-2 which specifies the board and the loading of each pin. Absolute maximum ratings (electrical sensitivity) Based on two different tests (ESD and LU) using specific measurement methods, the product is stressed in order to determine its performance in terms of electrical sensitivity. For more details, refer to the application note AN1181. Electrostatic discharge (ESD) Electrostatic discharges (a positive then a negative pulse separated by 1 second) are applied to the pins of each sample according to each pin combination. The sample size depends on the number of supply pins in the device (3 parts*(n+1) supply pin). Two models can be simulated: human body model and charge device model. This test conforms to the JESD22-A114A/A115A standard. Table 50. EMI data(1) 1. Not tested in production. Symbol Parameter Conditions Monitored frequency band Max vs. Unit 16 MHz SEMI Peak level VDD 3.6 V, TA +25 °C, LQFP32 conforming to IEC61967-2 0.1 MHz to 30 MHz -3 dB V 30 MHz to 130 MHz 9 130 MHz to 1 GHz 4 SAE EMI Level 2 - Table 51. ESD absolute maximum ratings Symbol Ratings Conditions Maximum value (1) 1. Data based on characterization results, not tested in production. Unit VESD(HBM) Electrostatic discharge voltage (human body model) TA +25 °C 2000 V VESD(CDM) Electrostatic discharge voltage (charge device model) 500 |
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