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поискавой системы для электроныых деталей |
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поискавой системы для электроныых деталей |
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STM8L052C6 датащи(PDF) 90 Page - STMicroelectronics |
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STM8L052C6 датащи(HTML) 90 Page - STMicroelectronics |
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90 / 103 page  Electrical parameters STM8L052C6 90/103 DocID023331 Rev 2 tS Sampling time VAIN on PF0 fast channel VDDA < 2.4 V 0.43(4)(5) -- µs VAIN on PF0 fast channel 2.4 V V DDA3.6 V 0.22(4)(5) -- µs VAIN on slow channels VDDA < 2.4 V 0.86(4)(5) -- µs VAIN on slow channels 2.4 V V DDA3.6 V 0.41(4)(5) -- µs tconv 12-bit conversion time - 12 + tS 1/fADC 16 MHz 1(4) µs tWKUP Wakeup time from OFF state -- - 3 µs tIDLE (6) Time before a new conversion TA +25 °C - - 1(7) s TA +70 °C - - 20(7) ms tVREFINT Internal reference voltage startup time -- - refer to Table 43 ms 1. The current consumption through VREF is composed of two parameters: - one constant (max 300 µA) - one variable (max 400 µA), only during sampling time + 2 first conversion pulses. So, peak consumption is 300+400 = 700 µA and average consumption is 300 + [(4 sampling + 2) /16] x 400 = 450 µA at 1Msps 2. VREF- or VDDA must be tied to ground. 3. Guaranteed by design, not tested in production. 4. Minimum sampling and conversion time is reached for maximum Rext = 0.5 k . 5. Value obtained for continuous conversion on fast channel. 6. The time between 2 conversions, or between ADC ON and the first conversion must be lower than tIDLE. 7. The tIDLE maximum value is on the “Z” revision code of the device. Table 44. ADC1 characteristics (continued) Symbol Parameter Conditions Min Typ Max Unit |
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