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поискавой системы для электроныых деталей |
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поискавой системы для электроныых деталей |
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STM8L052C6 датащи(PDF) 72 Page - STMicroelectronics |
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STM8L052C6 датащи(HTML) 72 Page - STMicroelectronics |
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72 / 103 page  Electrical parameters STM8L052C6 72/103 DocID023331 Rev 2 Low speed internal RC oscillator (LSI) In the following table, data is based on characterization results, not tested in production. Figure 15. Typical LSI frequency vs. VDD Table 31. LSI oscillator characteristics Symbol Parameter (1) 1. VDD = 1.8 V to 3.6 V, TA = -40 to 85 °C unless otherwise specified. Conditions(1) Min Typ Max Unit fLSI Frequency - 26 38 56 kHz tsu(LSI) LSI oscillator wakeup time - - - 200(2) 2. Guaranteed by design, not tested in production. µs IDD(LSI) LSI oscillator frequency drift(3) 3. This is a deviation for an individual part, once the initial frequency has been measured. 0 °C T A 85 °C -12 - 11 % |
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