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STM32WB10CC датащи(PDF) 82 Page - STMicroelectronics

номер детали STM32WB10CC
подробное описание детали  Multiprotocol wireless 32-bit MCU Arm®-based Cortex®-M4 with FPU, Bluetooth® 5.2 radio solution
PDF  110 Pages
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производитель  STMICROELECTRONICS [STMicroelectronics]
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STM32WB10CC датащи(HTML) 82 Page - STMicroelectronics

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Electrical characteristics
STM32WB10CC
82/110
DS13259 Rev 2
6.3.12
Flash memory characteristics
IDD(PLL)
PLL power consumption
on VDD(1)
VCO freq = 96 MHz
-
200
260
μA
VCO freq = 192 MHz
-
300
380
VCO freq = 344 MHz
-
520
650
1. Specified by design, not tested in production.
2. Take care of using the appropriate division factor M to obtain the specified PLL input clock values. The M factor is shared
between the two PLLs.
Table 53. PLL characteristics(1) (continued)
Symbol
Parameter
Conditions
Min
Typ
Max
Unit
Table 54. Flash memory characteristics(1)
1. Specified by design, not tested in production.
Symbol
Parameter
Conditions
Typ
Max
Unit
tprog
64-bit programming time
-
81.7
90.8
µs
tprog_row
One row (64 double word)
programming time
Normal programming
5.2
5.5
ms
Fast programming
3.8
4.0
tprog_page
One page (2 Kbytes)
programming time
Normal programming
41.8
43.0
Fast programming
30.4
31.0
tERASE
Page (2 Kbytes) erase time
-
22.0
24.5
tME
Mass erase time
-
22.1
25.0
IDD
Average consumption from VDD
Write mode
3.4
-
mA
Erase mode
3.4
-
Table 55. Flash memory endurance and data retention
Symbol
Parameter
Conditions
Min(1)
1. Evaluated by characterization, not tested in production.
Unit
NEND
Endurance
TA = –10 to +85 °C
10
kcycles
tRET
Data retention
1 kcycle(2) at TA = 85 °C
2. Cycling performed over the whole temperature range.
30
Years
10 kcycles(2) at TA = 55 °C
30
10 kcycles(2) at TA = 85 °C
15



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