STM32WB10CC datasheet(65/110 Pages) STMICROELECTRONICS

65 / 110 page

DS13259 Rev 2

65/110

STM32WB10CC

Electrical characteristics

102

Table 31. Typical current consumption in Run and Low-power run modes,

with different codes running from SRAM1, VDD = 3.3 V

Symbol

Parameter

Conditions

Code

Typ

Unit

Typ

Unit

25 °C

IDD(Run)

Supply current

in Run mode

fHCLK = 64 MHz

Reduced code(1)

6.75

105

µA/MHz

Coremark

6.30

Dhrystone 2.1

6.20

Fibonacci

6.05

While(1)

6.20

IDD(LPRun)

Supply current

Low-power run

fHCLK = fMSI = 2 MHz

All peripherals disabled

Reduced code(1)

200

µA

100

µA/MHz

Coremark

190

Dhrystone 2.1

185

Fibonacci

180

While(1)

185

1. Reduced code used for characterization results provided in Table 28 and Table 29.

Table 32. Current consumption in Sleep and Low-power sleep modes, Flash memory ON

Symbol

Parameter

Conditions

Typ

Max(1)

Unit

All peripherals disabled

fHCLK

25 °C 55 °C

85 °C 25 °C 85 °C

IDD

(Sleep)

Supply

current in

Sleep

mode,

fHCLK = fHSI16 up to 16 MHz

included,



fHCLK = fHSE up to 32 MHz

fHSI16 + PLL ON above 32 MHz

64 MHz

1.80

1.85

2.04

2.20

32 MHz 0.990

1.00

1.05

0.980 1.22

16 MHz 0.605 0.610

0.640 0.690 0.910

IDD

(LPSleep)

Supply

current in

Low-power

sleep mode

fHCLK = fMSI

2 MHz

0.055 0.065

0.095 0.080 0.240

1 MHz

0.036 0.047 0.0765 0.060 0.210

400 kHz 0.022 0.033 0.0625 0.030 0.180

100 kHz 0.016 0.0265 0.057 0.030 0.170

1. Evaluated by characterization (mean ± 4 σ), not tested in production, unless otherwise specified.

Table 33. Current consumption in Low-power sleep modes, Flash memory in Power down

Symbol

Parameter

Conditions

Typ

Max(1)

Unit

All peripherals disabled

fHCLK

25 °C

55 °C

85 °C

25 °C

85 °C

IDD

(LPSleep)

Supply

current in

low-power

sleep mode

fHCLK = fMSI

2 MHz

5566

9679

291

µA

1 MHz

3747

7762

252

400 kHz

2233

6336

225

100 kHz

1727

5734

219

1. Evaluated by characterization (mean ± 4 σ), not tested in production, unless otherwise specified.

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