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LTC4232 датащи(PDF) 14 Page - Analog Devices |
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LTC4232 датащи(HTML) 14 Page - Analog Devices |
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14 / 18 page ![]() LT4200 14 Rev. 0 For more information www.analog.com APPLICATIONS INFORMATION Design Example Consider the following design example (Figure 5): TA = 25°C, VIN = 12V, IMAX = 50A. IINRUSH = 700mA, CL = 2000µF, VUV = 9.88V, VOV = 15.2V, VPG = 10.5V. A current limit fault triggers an automatic restart of the power-up sequence. ADC R1 226k C1 1µF R2 20k 12V 4200 F05 CT 68nF CL 2000µF VOUT 12V 50A VDD Z1* UV OUT FB PG GND IMON RMON 20k LT4200 OV INTVCC TIMER SENSE+ FLT# + R3 140k R4 20k RT 10k R6 20k R5 150k UV = 9.88V OV = 15.2V PG = 10.5V *TVS Z1: DIODES INC. SMCJ15A PINS NOT USED IN THIS CIRCUIT: GATE, ISET Figure 5. 50A, 12V Card Resident Application The inrush current is defined by the current required to charge the output capacitor using the fixed 0.35V/ ms GATE charge up rate. The inrush current is defined by Equation 8. IINRUSH =CL • 0.35V ms ⎛ ⎝⎜ ⎞ ⎠⎟ = 2000µF • 0.35V ms ⎛ ⎝⎜ ⎞ ⎠⎟ = 700mA (8) As mentioned previously the charge-up time is the out- put voltage (12V) divided by the output rate of 0.35V/ms resulting in 34ms. The average power dissipation of 12V at 700mA (or 4.2W) must not exceed the SOA of the pass MOSFET for 34ms. This works out to be 0.774W√s, since the MOSFET sees a VDS ramp of 0V to 12V. This is below the LT4200 P√t spec of 7.5W√s. Next the power dissipated in the MOSFET during overcur- rent must be limited. The active current limit uses a timer to prevent excessive energy dissipation in the MOSFET. The worst-case power dissipation occurs when the volt- age versus current profile of the foldback current limit is at the maximum. This occurs when the current is 53.2A and the FB voltage is 1V, VOUT = 8.5V and MOSFET VDS = 3.5V. See the Current Limit Threshold Foldback in the Typical Performance Characteristics section to view this profile. In order to survive 186W, the MOSFET SOA dictates a maximum current limit timeout. TJ is calculated with Equation 9 from the ambient tem- perature, package thermal impedance (θJA) and the I2R heating. TJ = (θJA • I2 • RON) + TA = 12°C/W • (50A)2 • 2.2mΩ + 25°C = 91°C (9) The maximum current limit timeout is calculated from the P√t constant and the 186W dissipated in current limit as shown in Equation 10. P t = 7.5W s tMAX = 7.5W s P ⎛ ⎝⎜ ⎞ ⎠⎟ 2 tMAX = 7.5W s 186 ⎛ ⎝⎜ ⎞ ⎠⎟ 2 tMAX = 1.63ms (10) Therefore, it is acceptable to set the current limit timeout using CT to be 0.8ms (Equation 11). CT = 0.8ms 12 ms/µF [ ] = 68nF (11) To configure the LT4200 for auto retry after overcurrent fault, connect the FLT# to the UV pin. After the 0.8ms timeout the FLT# pin pulls down on the UV pin restart the power-up sequence. The resistive divider values for overvoltage (15.2V), undervoltage (9.88V) and power good (10.5V) thresh- olds can be calculated as follow: First, choose the bottom resistors (R2, R4 and R6) to be 20k, this makes the resis- tive divider draw 62μA of current if the input voltage is near the threshold. The top resistor values are calculated using Equation 12, Equation 13, and Equation 14. R1 =R2• VOV 1.235V −1 ⎛ ⎝⎜ ⎞ ⎠⎟ = 226k (12) |
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