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LTC4232 датащи(PDF) 14 Page - Analog Devices

номер детали LTC4232
подробное описание детали  50A Hot Swap E-Fuse with Guaranteed SOA
PDF  18 Pages
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производитель  AD [Analog Devices]
домашняя страница  http://www.analog.com
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LTC4232 датащи(HTML) 14 Page - Analog Devices

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LT4200
14
Rev. 0
For more information www.analog.com
APPLICATIONS INFORMATION
Design Example
Consider the following design example (Figure  5):
TA = 25°C, VIN = 12V, IMAX = 50A. IINRUSH = 700mA,
CL = 2000µF, VUV = 9.88V, VOV = 15.2V, VPG = 10.5V.
A current limit fault triggers an automatic restart of the
power-up sequence.
ADC
R1
226k
C1
1µF
R2
20k
12V
4200 F05
CT
68nF
CL
2000µF
VOUT
12V
50A
VDD
Z1*
UV
OUT
FB
PG
GND
IMON
RMON
20k
LT4200
OV
INTVCC
TIMER
SENSE+
FLT#
+
R3
140k
R4
20k
RT
10k
R6
20k
R5
150k
UV = 9.88V
OV = 15.2V
PG = 10.5V
*TVS Z1: DIODES INC. SMCJ15A
PINS NOT USED IN THIS CIRCUIT:
GATE, ISET
Figure 5. 50A, 12V Card Resident Application
The inrush current is defined by the current required
to charge the output capacitor using the fixed 0.35V/
ms GATE charge up rate. The inrush current is defined
by Equation 8.
IINRUSH =CL
0.35V
ms
⎝⎜
⎠⎟ =
2000µF •
0.35V
ms
⎝⎜
⎠⎟ =
700mA
(8)
As mentioned previously the charge-up time is the out-
put voltage (12V) divided by the output rate of 0.35V/ms
resulting in 34ms. The average power dissipation of 12V
at 700mA (or 4.2W) must not exceed the SOA of the pass
MOSFET for 34ms. This works out to be 0.774W√s, since
the MOSFET sees a VDS ramp of 0V to 12V. This is below
the LT4200 P√t spec of 7.5W√s.
Next the power dissipated in the MOSFET during overcur-
rent must be limited. The active current limit uses a timer
to prevent excessive energy dissipation in the MOSFET.
The worst-case power dissipation occurs when the volt-
age versus current profile of the foldback current limit is at
the maximum. This occurs when the current is 53.2A and
the FB voltage is 1V, VOUT = 8.5V and MOSFET VDS = 3.5V.
See the Current Limit Threshold Foldback in the Typical
Performance Characteristics section to view this profile.
In order to survive 186W, the MOSFET SOA dictates a
maximum current limit timeout.
TJ is calculated with Equation 9 from the ambient tem-
perature, package thermal impedance (θJA) and the
I2R heating.
TJ = (θJA • I2 • RON) + TA = 12°C/W •
(50A)2 • 2.2mΩ + 25°C = 91°C
(9)
The maximum current limit timeout is calculated from the
P√t constant and the 186W dissipated in current limit as
shown in Equation 10.
P t
= 7.5W s
tMAX =
7.5W s
P
⎝⎜
⎠⎟
2
tMAX =
7.5W s
186
⎝⎜
⎠⎟
2
tMAX = 1.63ms
(10)
Therefore, it is acceptable to set the current limit timeout
using CT to be 0.8ms (Equation 11).
CT =
0.8ms
12 ms/µF
[
]
= 68nF
(11)
To configure the LT4200 for auto retry after overcurrent
fault, connect the FLT# to the UV pin.
After the 0.8ms timeout the FLT# pin pulls down on the
UV pin restart the power-up sequence.
The resistive divider values for overvoltage (15.2V),
undervoltage (9.88V) and power good (10.5V) thresh-
olds can be calculated as follow: First, choose the bottom
resistors (R2, R4 and R6) to be 20k, this makes the resis-
tive divider draw 62μA of current if the input voltage is
near the threshold. The top resistor values are calculated
using Equation 12, Equation 13, and Equation 14.
R1
=R2•
VOV
1.235V
−1
⎝⎜
⎠⎟ =
226k
(12)



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