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HMC1126ACEZ-R7 датащи(PDF) 19 Page - Analog Devices |
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HMC1126ACEZ-R7 датащи(HTML) 19 Page - Analog Devices |
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19 / 21 page ![]() Data Sheet HMC1126ACEZ Rev. 0 | Page 19 of 21 CONSTANT DRAIN CURRENT BIASING vs. CONSTANT GATE VOLTAGE BIASING Voltage Biasing The HMC920LP5E uses closed loop feedback to continuously adjust VGATE to maintain a constant drain current bias over the dc supply variation, temperature, and part to part variations. Constant drain current bias is an ideal method for reducing time in calibration procedures and maintaining consistent performance over time. In comparison to a constant gate voltage bias, where the current increases dynamically when the RF power is applied, a constant drain current bias results in constant power consumption. The OP1dB performance for the constant drain current bias can be varied by varying the bias setpoint. By increasing the bias current, OP1dB increases, as shown in Figure 66. The trade-off with a constant drain current is that this higher drain current is present for all RF input and output power levels. The current and temperature limit of IDD under the constant current operation is usually set by the thermal limitations detailed in the Absolute Maximum Ratings section (see the continuous power dissipation specification in Table 5). Increasing IDD does not indefinitely increase OP1dB. Therefore, consider the trade-off between the power dissipation and OP1dB performance when using a constant drain current bias. The performance of the constant drain current circuit is summarized in Figure 60 to Figure 67. These figures include comparisons with a constant gate voltage bias. Note that Figure 60 indicates a current consumption of 140 mA, which includes the complete current consumption of the circuit, that is, 120 mA drain current for the HMC1126ACEZ and an additional 20 mA of quiescent current in the HMC920LP5E. Using 140 mA as the current consumption also results in lower PAE compared to a constant gate voltage bias. 180 80 110 160 140 90 120 100 130 170 150 –10 15 5 0 10 –5 INPUT POWER (dBm) CONSTANT DRAIN CURRENT BIAS CONSTANT GATE VOLTAGE BIAS Figure 60. IDD vs. Input Power, VDD = 5 V, Frequency = 26 GHz, Constant Drain Current Bias (IDD = 140 mA) and Constant Gate Voltage Bias 22 20 0 6 16 12 2 8 4 10 18 14 –10 15 5 0 10 –5 INPUT POWER (dBm) CONSTANT DRAIN CURRENT BIAS CONSTANT GATE VOLTAGE BIAS Figure 61. Output Power vs. Input Power, VDD = 5 V, Frequency = 26 GHz, Constant Drain Current Bias (IDD = 140 mA) and Constant Gate Voltage Bias 14 12 0 8 4 2 10 6 –10 15 5 0 10 –5 INPUT POWER (dBm) CONSTANT DRAIN CURRENT BIAS CONSTANT GATE VOLTAGE BIAS Figure 62. PAE vs. Input Power, VDD = 5 V, Frequency = 26 GHz, Constant Drain Current Bias (IDD = 140 mA) and Constant Gate Voltage Bias 22 20 0 4 8 12 16 18 2 6 10 14 2 30 14 22 10 38 26 34 18 6 FREQUENCY (GHz) CONSTANT DRAIN CURRENT BIAS CONSTANT GATE VOLTAGE BIAS Figure 63. OP1dB vs. Frequency, VDD =5 V, Constant Drain Current Bias (IDD = 140 mA) and Constant Gate Voltage Bias |
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