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поискавой системы для электроныых деталей |
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поискавой системы для электроныых деталей |
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HMC1126ACEZ-R7 датащи(PDF) 15 Page - Analog Devices |
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HMC1126ACEZ-R7 датащи(HTML) 15 Page - Analog Devices |
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15 / 21 page  Data Sheet HMC1126ACEZ Rev. 0 | Page 15 of 21 THEORY OF OPERATION The HMC1126ACEZ is a GaAs, pHEMT, low noise amplifier. The low noise amplifier uses a fundamental cell of two field effect transistors (FETs), as shown in Figure 56. This fundamental cell is duplicated a number of times, thereby increasing the operational bandwidth. The negative VGG1 sets the supply current, and the voltage on VGG2 ensures that there are approximately equal dc voltages across the top and bottom FETs. The RFIN and RFOUT pins are ac-coupled and matched to 50 Ω. VDD is applied through an integrated choke. The 0.1 μF and 100 pF decoupling capacitors are integrated. As a result, no external passive components are required for operation. GND GND GND RFIN VGG1 VGG2 VDD RFOUT 100pF 0.1µF 100pF 0.1µF 100pF 0.1µF Figure 56. Simplified Block Diagram |
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