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HMC1126ACEZ-R7 датащи(PDF) 7 Page - Analog Devices

номер детали HMC1126ACEZ-R7
подробное описание детали  GaAs, pHEMT, Low Noise Amplifier, 400 MHz to 52 GHz
PDF  21 Pages
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производитель  AD [Analog Devices]
домашняя страница  http://www.analog.com
Logo AD - Analog Devices

HMC1126ACEZ-R7 датащи(HTML) 7 Page - Analog Devices

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Data Sheet
HMC1126ACEZ
Rev. 0 | Page 7 of 21
TYPICAL PERFORMANCE CHARACTERISTICS
IDQ is the drain current without the RF signal applied, and IDD is the drain current with the RF signal applied.
15
–20
–15
5
–5
–10
10
0
0.25
2.00
1.75
1.00
1.50
0.75
1.25
0.50
FREQUENCY (GHz)
S22
S21
S11
Figure 8. Low Frequency Gain and Return Loss vs. Frequency, VDD = 5 V,
IDQ = 85 mA, VGG2 = 1 V (S22 Is the Output Return Loss, S21 Is the Gain, and
S11 Is the Input Return Loss)
16
0
4
12
8
2
6
14
10
2
52
47
32
17
42
27
12
37
22
7
FREQUENCY (GHz)
+85°C
+25°C
–40°C
Figure 9.Gain vs. Frequency at Various Temperatures,
VDD = 5 V, IDQ = 85 mA, VGG2 = 1 V
0
–20
–15
–5
–10
2
52
47
32
17
42
27
12
37
22
7
FREQUENCY (GHz)
+85°C
+25°C
–40°C
Figure 10. Input Return Loss vs. Frequency at Various Temperatures,
VDD = 5 V, IDQ = 85 mA, VGG2 = 1 V
15
–25
–20
–15
5
–5
–10
10
0
0
65
60
40
20
55
35
15
50
30
10
45
25
5
FREQUENCY (GHz)
S22
S21
S11
Figure 11. Gain and Return Loss vs. Frequency,
VDD = 5 V, IDQ = 85 mA, VGG2 = 1 V
0
–25
–15
–5
–20
–10
2
52
47
32
17
42
27
12
37
22
7
FREQUENCY (GHz)
+85°C
+25°C
–40°C
Figure 12. Output Return Loss vs. Frequency at Various Temperatures,
VDD = 5 V, IDQ = 85 mA, VGG2 = 1 V
16
0
4
12
8
2
6
14
10
2
52
47
32
17
42
27
12
37
22
7
FREQUENCY (GHz)
5.0V
4.0V
3.3V
Figure 13. Gain vs. Frequency at Various VDD Voltages,
IDQ = 85 mA, VGG2 = 1 V



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