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HMC1126ACEZ-R7 датащи(PDF) 16 Page - Analog Devices

номер детали HMC1126ACEZ-R7
подробное описание детали  GaAs, pHEMT, Low Noise Amplifier, 400 MHz to 52 GHz
PDF  21 Pages
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производитель  AD [Analog Devices]
домашняя страница  http://www.analog.com
Logo AD - Analog Devices

HMC1126ACEZ-R7 датащи(HTML) 16 Page - Analog Devices

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HMC1126ACEZ
Data Sheet
Rev. 0 | Page 16 of 21
APPLICATIONS INFORMATION
Figure 57 shows the basic connections for operating the
HMC1126ACEZ. Because the RFIN and RFOUT pins are
internally ac-coupled, no external ac coupling is required.
Because VDD, VGG1, and VGG2 are internally decoupled, no
external components are required on these pins. Figure 57 shows
the configuration used to characterize and qualify the device.
See the HMC1126-EVALZ user guide for information on using
the evaluation board.
POWER-UP AND POWER-DOWN SEQUENCING
To avoid damaging the device, careful attention must be paid to
the power-up and power-down sequencing of the RF input, the
gate bias voltages, and the drain bias voltage.
Power-Up
The following power-up sequencing is recommended:
1. Connect GND to ground.
2. Set VGG1 to −2 V.
3. Set VDD to 5 V.
4. Set VGG2 to 1 V.
5. Increase VGG1 to achieve an IDQ = 85 mA.
6. Apply the RF signal.
Power-Down
The following power-down sequencing is recommended:
1. Turn off the RF signal.
2. Decrease VGG1 to −2 V to achieve an IDQ = 0 mA.
3. Decrease VGG2 to 0 V.
4. Decrease VDD to 0 V.
5. Increase VGG1 to 0 V.
2
1
3
4
5
6
18
17
16
15
14
13
GND
RFIN
GND
GND
RFOUT
VGG1
(–2V TO 0V)
VGG2
(1V)
VDD
(5V)
GND
Figure 57. Basic Connections



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