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поискавой системы для электроныых деталей |
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поискавой системы для электроныых деталей |
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FDPC8014AS датащи(PDF) 3 Page - ON Semiconductor |
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FDPC8014AS датащи(HTML) 3 Page - ON Semiconductor |
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3 / 12 page  FDPC8014AS www.onsemi.com 3 ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise noted) Symbol Parameter Test Condition Type Min Typ Max Unit OFF CHARACTERISTICS BVDSS Drain to Source Breakdown Voltage ID = 250 mA, VGS = 0 V ID = 1 mA, VGS = 0 V Q1 Q2 25 25 − − − − V DBVDSS / DTJ Breakdown Voltage Temperature Coefficient ID = 250 mA, referenced to 25°C ID = 10 mA, referenced to 25°C Q1 Q2 − − 24 25 − − mV/°C IDSS Zero Gate Voltage Drain Current VDS = 20 V, VGS = 0 V VDS = 20 V, VGS = 0 V Q1 Q2 − − − − 1 500 mA mA IGSS Gate to Source Leakage Current, Forward VGS = 12 V / −8 V, VDS = 0 V VGS = 12 V / −8 V, VDS = 0 V Q1 Q2 − − − − ±100 ±100 nA nA ON CHARACTERISTICS VGS(th) Gate to Source Threshold Voltage VGS = VDS, ID = 250 mA VGS = VDS, ID = 1 mA Q1 Q2 0.8 1.0 1.3 1.5 2.5 3.0 V DVGS(th) / DTJ Gate to Source Threshold Voltage Temperature Coefficient ID = 250 mA, referenced to 25°C ID = 10 mA, referenced to 25°C Q1 Q2 − − −4 −3 − − mV/°C rDS(on) Drain to Source On Resistance VGS = 10 V, ID = 20 A VGS = 4.5 V, ID = 18 A VGS = 10 V, ID = 20 A, TJ =125°C Q1 − − − 2.9 3.6 3.9 3.8 4.7 5.3 mW VGS = 10 V, ID = 40 A VGS = 4.5 V, ID = 37 A VGS = 10 V, ID = 40 A , TJ =125°C Q2 − − − 0.75 0.9 1.0 1.0 1.2 1.5 gFS Forward Transconductance VDS = 5 V, ID = 20 A VDS = 5 V, ID = 40 A Q1 Q2 − − 182 296 − − S DYNAMIC CHARACTERISTICS Ciss Input Capacitance Q1: VDS = 13 V, VGS = 0 V, f = 1 MHZ Q2: VDS = 13 V, VGS = 0 V, f = 1 MHZ Q1 Q2 − − 1695 6985 2375 9780 pF Coss Output Capacitance Q1 Q2 − − 495 2170 710 3040 pF Crss Reverse Transfer Capacitance Q1 Q2 − − 54 172 100 245 pF Rg Gate Resistance Q1 Q2 0.1 0.1 0.4 0.4 1.2 1.2 W SWITCHING CHARACTERISTICS td(on) Turn−On Delay Time Q1: VDD = 13 V, ID = 20 A, RGEN = 6 W Q2: VDD = 13 V, ID = 40 A, RGEN = 6 W Q1 Q2 − − 8 16 16 29 ns tr Rise Time Q1 Q2 − − 2 6 10 12 ns td(off) Turn−Off Delay Time Q1 Q2 − − 24 48 38 76 ns tf Fall Time Q1 Q2 − − 2 5 10 10 ns Qg Total Gate Charge VGS = 0 V to 10 V Q1: VDD = 13 V, ID = 20 A Q2: VDD = 13 V, ID = 40 A Q1 Q2 − − 25 97 35 135 nC Qg Total Gate Charge VGS = 0 V to 4.5 V Q1: VDD = 13 V, ID = 20 A Q2: VDD = 13 V, ID = 40 A Q1 Q2 − − 11 44 16 62 nC Qgs Gate to Source Gate Charge Q1: VDD = 13 V, ID = 20 A Q2: VDD = 13 V, ID = 40 A Q1 Q2 − − 3.4 14 − − nC Qgd Gate to Drain “Miller” Charge Q1 Q2 − − 2.2 9 − − nC |
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