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FDPC8014AS датащи(PDF) 7 Page - ON Semiconductor

номер детали FDPC8014AS
подробное описание детали  MOSFET ??Dual, N-Channel, POWERTRENCH, Power Clip, Asymmetric 25 V
PDF  12 Pages
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производитель  ONSEMI [ON Semiconductor]
домашняя страница  http://www.onsemi.com
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FDPC8014AS датащи(HTML) 7 Page - ON Semiconductor

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TYPICAL CHARACTERISTICS (Q2 N−CHANNEL) (TJ = 25°C unless otherwise noted)
0.0
0.2
0.4
0.6
0
30
60
90
120
150
0
30
60
90
120
0
2
4
6
8
−75 −50 −25
0
25
50
75
100 125
0.8
0.9
1.0
1.1
1.2
1.3
1.4
1.5
ID = 40 A
VGS = 10 V
0
1
2
3
4
5
ID = 40 A
1.0
1.5
2.0
2.5
0
30
60
90
120
150
0.0
0.2
0.4
0.6
0.8
0.001
0.01
0.1
1
10
100
0.8
150
3.0
1.0
Figure 14. On−Region Characteristics
Figure 15. Normalized on−Resistance vs.
Drain Current and Gate Voltage
Figure 16. Normalized On−Resistance vs.
Junction Temperature
Figure 17. On−Resistance vs. Gate to Source Voltage
Figure 18. Transfer Characteristics
Figure 19. Source to Drain Diode Forward Voltage vs.
Source Current
PULSE DURATION = 80 ms
DUTY CIRCLE = 0.5% MAX
VDS, DRAIN TO SOURCE VOLTAGE (V)
ID, DRAIN CURRENT (A)
TJ, JUNCTION TEMPERATURE (°C)
TJ = 125°C
VGS, GATE TO SOURCE VOLTAGE (V)
PULSE DURATION = 80 ms
DUTY CIRCLE = 0.5% MAX
PULSE DURATION = 80 ms
DUTY CIRCLE = 0.5% MAX
TJ = 25°C
VGS, GATE TO SOURCE VOLTAGE (V)
VSD, BODY DIODE FORWARD VOLTAGE (V)
VDS = 5 V
TJ = 125°C
PULSE DURATION = 80 ms
DUTY CIRCLE = 0.5% MAX
TJ = 25°C
TJ = −55°C
VGS = 0 V
TJ = 125°C
TJ = 25°C
TJ = −55°C
VGS = 10 V
VGS = 4.5 V
VGS = 3.5 V
VGS = 3 V
VGS = 2.5 V
VGS = 3.5 V VGS = 4.5 V VGS = 10 V
VGS = 3 V
VGS = 2.5 V
150
45
6
23
8
9
10
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