FDPC8014AS datasheet(2/12 Pages) ONSEMI

2 / 12 page

FDPC8014AS

www.onsemi.com

MOSFET MAXIMUM RATINGS (TA = 25°C, unless otherwise noted)

Symbol

Parameter

Unit

VDS

Drain to Source Voltage

25 (Note 4)

VGS

Gate to Source Voltage

±12

Drain Current

−Continuous

TC = 25°C (Note 5)

159

−Continuous

TC = 100°C (Note 5)

100

−Continuous

TA = 25°C

20 (Note 1a)

40 (Note 1b)

−Pulsed

(Note 3)

266

1116

EAS

Single Pulse Avalanche Energy

(Note 2)

294

Power Dissipation for Single Operation

TC = 25°C

Power Dissipation for Single Operation

TA = 25°C

2.1 (Note 1a)

2.3 (Note 1b)

TJ, TSTG Operating and Storage Junction Temperature Range

−55 to +150

°C

Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality

should not be assumed, damage may occur and reliability may be affected.

THERMAL CHARACTERISTICS (TA = 25°C, unless otherwise noted)

Symbol

Parameter

Unit

RqJC

Thermal Resistance, Junction to Case

6.0

3.3

°C/W

RqJA

Thermal Resistance, Junction to Ambient

60 (Note 1a)

55 (Note 1b)

RqJA

Thermal Resistance, Junction to Ambient

130 (Note 1c)

120 (Note 1d)

1. RθJAis determined with the device mounted on a 1 in2 pad 2 oz copper pad on a 1.5 x 1.5 in. board of FR−4 material. RθJCis guaranteed by

design while R

θCA is determined by the user’s board design.

a. 60°C/W when mounted on

a 1 in2 pad of 2 oz copper

c. 130°C/W when mounted on

a minimum pad of 2 oz copper

b. 55°C/W when mounted on

a 1 in2 pad of 2 oz copper

d. 120°C/W when mounted on

a minimum pad of 2 oz copper

2. Q1: EASof 73 mJ is based on starting TJ = 25°C; N−ch: L = 3 mH, IAS = 7 A, VDD = 30 V, VGS = 10 V. 100% test at L = 0.1 mH, IAS = 24 A.

Q2: EAS of 294 mJ is based on starting TJ = 25°C; N−ch: L = 3 mH, IAS = 14 A, VDD = 25 V, VGS = 10 V. 100% test at L = 0.1 mH, IAS = 46 A.

3. Pulsed Id please refer to Figure 11 and Figure 24 SOA graph for more details.

4. The continuous VDS rating is 25 V; However, a pulse of 30 V peak voltage for no longer than 100 ns duration at 600 kHz frequency can be

applied.

5. Computed continuous current limited to Max Junction Temperature only, actual continuous current will be limited by thermal &

electro−mechanical application board design.

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