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FDPC8014AS датащи(PDF) 5 Page - ON Semiconductor |
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FDPC8014AS датащи(HTML) 5 Page - ON Semiconductor |
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5 / 12 page ![]() FDPC8014AS www.onsemi.com 5 TYPICAL CHARACTERISTICS (Q1 N−CHANNEL) (TJ = 25°C unless otherwise noted) (continued) Figure 5. Transfer Characteristics Figure 6. Source to Drain Diode Forward Voltage vs. Source Current Figure 7. Gate Charge Characteristics Figure 8. Capacitance vs. Drain to Source Voltage Figure 9. Unclamped Inductive Switching Capability Figure 10. Maximum Continuous Drain Current vs. Case Temperature 1.0 1.5 2.0 2.5 3.0 0 15 30 45 60 75 VGS, GATE TO SOURCE VOLTAGE (V) 0.0 0.2 0.4 0.6 0.8 1.0 0.001 0.01 0.1 1 10 100 VSD, BODY DIODE FORWARD VOLTAGE (V) VDS = 5 V TJ = 150°C PULSE DURATION = 80 ms DUTY CIRCLE = 0.5% MAX TJ = 25°C TJ = −55°C VGS = 0 V TJ = 150°C TJ = 25°C TJ = −55°C 0 6 12 18 24 30 0 2 4 6 8 10 Qg, GATE CHARGE (nC) ID = 20 A VDD = 13 V VDD = 10 V VDD = 15 V 0.1 1 10 25 10 100 1000 10000 VDS, DRAIN TO SOURCE VOLTAGE (V) Crss Coss Ciss f = 1 MHz VGS = 0 V 0.001 0.01 0.1 1 10 1 10 30 TJ = 125°C tAV, TIME IN AVALANCHE (ms) TJ = 25°C TJ = 100°C 100 25 50 75 100 125 0 10 20 30 40 50 60 TC, CASE TEMPERATURE (°C) 150 VGS = 4.5 V VGS = 10 V RqJC = 6.0°C/W |
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