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TC80310 датащи(PDF) 7 Page - NXP Semiconductors |
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TC80310 датащи(HTML) 7 Page - NXP Semiconductors |
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7 / 31 page ![]() NXP Semiconductors 7 80310 4.3 Dynamic electrical characteristics VBUS-LOW-REC Bus Voltage Low Level Receive (LIN) – – 0.3 * VB+A V (12) VBUS-LOW-SEND Bus Voltage Low Level Send (LIN) – – 1.4 V (12) VBUS-HIGH-REC Bus Voltage High Level Receive (LIN) – – 0.7*VB+A V (12) VBUS-HIGH-SEND Bus Voltage High Level Send (LIN) 6.4 – – V (12) VVCCLB Emergency Regulation Voltage – 8.5 9.5 V (13) Notes 12. Referred to regulator/alternator ground. 13. Operates asynchronous to the regulation cycle in case of a very rapid drop in B+A, usually caused by adding a heavy load without a battery in the system. Table 5. Dynamic Electrical Characteristics Electrical parameters are tested at die level from 30 °C to 140 °C. Typical values noted reflect the approximate parameter mean at TA = 25 °C under nominal conditions, unless otherwise noted. TJ from -40 °C to 150 °C, unless otherwise noted. Operation is guaranteed by design up to TJ-TSD. Symbol Characteristic Min. Typ. Max. Unit Notes FREG Regulation Frequency 106 122 137 Hz tLPH Phase Noise Rejection Filter – 12.5 – μs tFAULT Fault Qualification Delay/Filter – 400 – ms (14) tRISE Bus Signal Risetime (LIN) • From 20% to 80% of VBUS with VB+A = 18 V 5.0 – 40 μs tFALL Bus Signal Falltime (LIN) • From 20% to 80% of VBUS with VB+A = 18 V 3.5 – 40 μs DCMIN Minimum Duty Cycle – 4.1 – % DCSTARTUP Start-up Duty Cycle – 13.5 – % ΔLRC Delta LRC Duty Cycle – 3.125 – % Notes 14. A fault has to be present for the entire time before it is considered valid. Table 4. Static electrical characteristics (continued) Electrical parameters are tested at die level from 30 °C to 140 °C. Typical values noted reflect the approximate parameter mean at TA = 25 °C under nominal conditions, unless otherwise noted. Parametric guaranteed from TJ = -40 °C to 150 °C, unless otherwise noted. Operation is guaranteed by design up to TJ-TSD. Symbol Characteristic Min. Typ. Max. Unit Notes |
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