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STP180N55 датащи(PDF) 4 Page - STMicroelectronics

номер детали STP180N55
подробное описание детали  N-CHANNEL 55V - 2.9m-ohm - 120A - D-2 PAK - TO-220 MDmesh-TM Low Voltage Power MOSFET
PDF  11 Pages
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производитель  STMICROELECTRONICS [STMicroelectronics]
домашняя страница  http://www.st.com
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STP180N55 датащи(HTML) 4 Page - STMicroelectronics

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2 Electrical characteristics
STP180N55 - STB180N55
4/11
Table 5.
Switching times
Table 6.
Source drain diode
(1) Current limited by package
(2) Pulse width limited by safe operating area
(3) Pulsed: pulse duration = 300µs, duty cycle 1.5%
(4) Starting Tj=25°C, Id=60A, Vdd=40V
(5) When mounted o inch² FR4 2oz Cu
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
td(on)
tr
Turn-on Delay Time
Rise Time
VDD=27V, ID= 60A,
RG=4.7Ω, VGS=10V
(see Figure 3)
TBD
TBD
ns
ns
td(off)
tf
Off voltage Rise Time
FallTime
VDD=27V, ID= 60A,
RG=4.7Ω, VGS=10V
(see Figure 3)
TBD
TBD
ns
ns
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
ISD
ISDM Note 2
Source-drain Current
Source-drain Current (pulsed)
120
480
A
A
VSDNote 3
Forward on Voltage
ISD=120A, VGS=0
1.5
V
trr
Qrr
IRRM
Reverse Recovery Time
Reverse Recovery Charge
Reverse Recovery Current
ISD=120A, di/dt = 100A/µs,
VDD=30V, Tj=150°C
TBD
TBD
TBD
ns
nC
A



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