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поискавой системы для электроныых деталей |
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поискавой системы для электроныых деталей |
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STP180N55 датащи(PDF) 2 Page - STMicroelectronics |
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STP180N55 датащи(HTML) 2 Page - STMicroelectronics |
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2 / 11 page  1 Electrical ratings STP180N55 - STB180N55 2/11 1 Electrical ratings Table 1. Absolute maximum ratings Table 2. Thermal data Symbol Parameter Value Unit VDS Drain-source Voltage (VGS=0) 55 V VGS Gate-Source Voltage ± 20 V ID Note 1 Drain Current (continuous) at TC = 25°C 120 A ID Note 1 Drain Current (continuous) at TC = 100°C 120 A IDM Note 2 Drain Current (pulsed) 480 A PTOT Total Dissipation at TC = 25°C 315 W Derating Factor 2.1 W/°C dv/dt Peak Diode Recovery voltage slope TBD V/ns EAS Note 4 Single Pulse Avalanche Energy TBD mJ Tj Tstg Operating Junction Temperature Storage Temperature -55 to 175 °C TO-220 D²PAK Unit Rthj-case Thermal Resistance Junction-case 0.48 °C/W Rthj-a Thermal Resistance Junction-ambient Max 62.5 -- °C/W Rthj-pcb Note 5 Thermal Resistance Junction-ambient Max -- 35 °C/W Tl Maximum Lead Temperature For Soldering Purpose 300 -- °C |
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