TARGET SPECIFICATION

Rev 1

January 2006

1/11

11

This is a preliminary information on a new product foreseen to be developed. Details are subject to change without notice

STB180N55

STP180N55

N-CHANNEL 55V - 2.9m

Ω - 120A - D²PAK - TO-220

MDmesh™ Low Voltage Power MOSFET

General features

■

ULTRA LOW ON-RESISTANCE

■

100% AVALANCHE TESTED

Description

This N-Channel enhancement mode MOSFET is

the latest refinement of STMicroelectronic unique

“Single Feature Size™“ strip-based process with

less critical aligment steps and

therefore a

remarkable manufacturing reproducibility. The

resulting transistor shows extremely high packing

density for low on-resistance, rugged avalanche

Applications

■

HIGH CURRENT SWITCHING APPLICATION

Order codes

Internal schematic diagram

Type

STB180N55

55V

3.5m

Ω

120A (Note 1)

STP180N55

55V

3.8m

Ω

120A (Note 1)

1

3

D²PAK

1

2

3

TO-220

Sales Type

Marking

Package

Packaging

STB180N55

B180N55

D²PAK

TAPE & REEL

STP180N55

P180N55

TO-220

TUBE

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