| поискавой системы для электроныых деталей |
|
STP180N55 датащи(PDF) 3 Page - STMicroelectronics |
|
|
|||||||||||||||||||||||||||||
STP180N55 датащи(HTML) 3 Page - STMicroelectronics |
|
3 / 11 page ![]() STP180N55 - STB180N55 2 Electrical characteristics 3/11 2 Electrical characteristics (TCASE = 25 °C unless otherwise specified) Table 3. On/off states Table 4. Dynamic Symbol Parameter Test Conditions Min. Typ. Max. Unit V(BR)DSS Drain-Source Breakdown Voltage ID = 250µA, VGS= 0 55 V IDSS Zero Gate Voltage Drain Current (VGS = 0) VDS = Max Rating, VDS = Max Rating,Tc = 125°C 10 100 µA µA IGSS Gate Body Leakage Current (VDS = 0) VGS = ±20V ± 200 nA VGS(th) Gate Threshold Voltage VDS= VGS, ID = 250µA 24 V RDS(on) Static Drain-Source On Resistance VGS= 10V, ID= 60A D²PAK TO-220 3.5 3.8 m Ω m Ω Symbol Parameter Test Conditions Min. Typ. Max. Unit gfs Note 3 Forward Transconductance VDS =15V, ID = 60A TBD S Ciss Coss Crss Input Capacitance Output Capacitance Reverse Transfer Capacitance VDS =25V, f=1 MHz, VGS=0 6200 1800 100 pF pF pF Qg Qgs Qgd Total Gate Charge Gate-Source Charge Gate-Drain Charge VDD=44V, ID = 120A VGS =10V (see Figure 2) 110 TBD TBD TBD nC nC nC |
|
|
ссылки URL |
| Вашему бизинису помогли Аллдатащит? [ DONATE ] |
Что такое Аллдатащит | реклама | контакт | Конфиденциальность | Ссылка на техническое описание | обмен ссыками | поиск по производителю All Rights Reserved©Alldatasheet.com |
| Russian : Alldatasheetru.com | Korean : Alldatasheet.co.kr | Spanish : Alldatasheet.es | French : Alldatasheet.fr | Italian : Alldatasheetit.com Portuguese : Alldatasheetpt.com | Polish : Alldatasheet.pl | Vietnamese : Alldatasheet.vn Indian : Alldatasheet.in | Mexican : Alldatasheet.com.mx | British : Alldatasheet.co.uk | New Zealand : Alldatasheet.co.nz |
|
Family Site : ic2ic.com |
icmetro.com |