PRELIMINARY DATA

This is preliminary information on a new product now in development or undergoing evaluation. Details are subject to

change without notice.

January 2006

Rev1.0

1/23

2

NAND01G-N

1 Gbit (x8/x16) 2112 Byte Page NAND Flash Memory and

512 Mbit (x16) LPSDRAM, 1.8V, Multi-Chip Package

Features summary

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Multi-chip Package

– NAND Flash Memory

– 512 Mbit or 1 Gbit (x8/x16) Large Page

Size NAND Flash Memory

– 512 Mbit (x16) SDR or DDR LPSDRAM

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Temperature range

– -30 up to 85 °C

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Supply voltage

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Electronic Signature

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Flash Memory

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Nand Interface

– x8 or x16 bus width

– Multiplexed address/data

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Page size

– x8 device: (2048 + 64 spare) Bytes

– x16 device: (1024 + 32 spare) Words

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Block size

– x8 device: (128K + 4K spare) Bytes

– x16 device: (64K + 2K spare) Words

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Page Read/Program

– Random access: 25µs (max)

– Sequential access: 50ns (min)

– Page program time: 300µs (typ)

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Copy Back Program mode

– Fast page copy without external buffering

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Fast Block Erase

– Block Erase time: 2ms (typ)

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Chip Enable ‘don’t care’

– for simple interfacing with microcontrollers

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Status Register

SDR/DDR LPSDRAM

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Interface: x16 bus width

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Programmable Partial Array Self Refresh

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Auto Temperature Compensated Self Refresh

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Deep Power Down mode

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1.8V LVCMOS interface

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Quad internal Banks controlled by BA0 and

BA1

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Wrap sequence: Sequential/Interleaved

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Automatic and Controlled Precharge

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Auto Refresh and Self Refresh

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8,192 Refresh Cycles/64ms

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Burst Termination by Burst Stop command and

Precharge Command

FBGA

TFBGA107 10.5 x 13 x 1.2mm

TFBGA149 10 x 13.5 x 1.2mm

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