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AT25SF321 датащи(PDF) 39 Page - Dialog Semiconductor

номер детали AT25SF321
подробное описание детали  32-Mbit, 2.5V Minimum SPI Serial Flash Memory with Dual-I/O and Quad-IO Support
PDF  48 Pages
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производитель  DIALOG [Dialog Semiconductor]
домашняя страница  http://www.dialog-semiconductor.com/
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AT25SF321 датащи(HTML) 39 Page - Dialog Semiconductor

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AT25SF321
DS-25SF321–047F–8/2017
tCSHH
Chip Select High Hold Time (relative to Clock)
5
5
ns
tDS
Data In Setup Time
2
2
ns
tDH
Data In Hold Time
2
2
ns
tDIS(1)
Output Disable Time
7
6
ns
tV
Output Valid Time (03h, 0Bh)
7
6
ns
Output Valid Time (3Bh, BBh - Dual)
7
7
Output Valid Time (6Bh, EBh - Quad)
8
8
tOH
Output Hold Time
0
0
ns
tHLS
HOLD Low Setup Time (relative to Clock)
5
5
ns
tHLH
HOLD Low Hold Time (relative to Clock)
5
5
ns
tHHS
HOLD High Setup Time (relative to Clock)
5
5
ns
tHHH
HOLD High Hold Time (relative to Clock)
5
5
ns
tHLQZ (1)
HOLD Low to Output High-Z
6
6
ns
tHHQZ(1)
HOLD High to Output High-Z
6
6
ns
tWPS(1) (2)
Write Protect Setup Time
20
20
ns
tWPH(1)(2)
Write Protect Hold Time
100
100
ns
tEDPD
(1)
Chip Select High to Deep Power-Down
1
1
µs
tRDPD
(1)
Chip Select High to Standby Mode
5
5
µs
tRDPO
(1)
Resume Deep Power-Down, CS High to ID
5
5
µs
1.
Not 100% tested (value guaranteed by design and characterization).
2.
Only applicable as a constraint for the Write Status Register command when BPL = 1.
12.6 Program and Erase Characteristics
Symbol
Parameter
2.5 to 3.6V
2.7V to 3.6V
Min
Typ
Max
Min
Typ
Max
Units
tPP
(1)
Page Program Time (256 Bytes)
0.7
5
0.7
3.0
ms
tBP
Byte Program Time
5
5
µs
tBLKE
(1)
Block Erase Time
4 Kbytes
60
300
60
300
ms
32 Kbytes
300
1300
300
1300
64 K bytes
500
3000
500
3000
tCHPE
(1) (2)
Chip Erase Time
25
60
25
60
sec
12.5 AC Characteristics - All Other Parameters
Symbol
Parameter
2.5V to 3.6V
2.7V to 3.6V
Units
Min
Typ
Max
Min
Typ
Max



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