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MCP33131 датащи(PDF) 8 Page - Microchip Technology |
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MCP33131 датащи(HTML) 8 Page - Microchip Technology |
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8 / 54 page ![]() DS20006122A-page 8 2018 Microchip Technology Inc. MCP33131/MCP33121/MCP33111-XX TABLE 1-2: SERIAL INTERFACE TIMING SPECIFICATIONS TABLE 1-3: TEMPERATURE CHARACTERISTICS Electrical Specifications: Unless otherwise specified, all parameters apply for TA = -40°C to +125°C, AVDD = 1.8V, DVIO = 3.3V, GND = 0V, Analog Input (AIN) = -1 dBFS sine wave, Resolution = 16-bit (MCP33131-10), fIN = 10 kHz, CLOAD_SDO = 20 pF, +25°C is applied for typical value. All timings are measured at 50%. See Figure 1-1 for timing diagram. • MCP331x1-10: Sample Rate (fS) = 1 Msps, SPI Clock Input (SCLK) = 60 MHz. • MCP331x1-05: Sample Rate (fS) = 500 kSPS, SPI Clock Input (SCLK) = 30 MHz. Parameters Symbol Min. Typ. Max. Units Conditions Serial Clock frequency fSCLK — — 100 MHz See tSCLK specification SCLK Period tSCLK 10 — — ns DVIO ≥ 3.3V, fSCLK = 100 MHz (Max) 12 — — ns DVIO ≥ 2.3V, fSCLK = 83.3 MHz (Max) 16 — — ns DVIO ≥ 1.7V, fSCLK = 62.5 MHz (Max) SCLK Low Time tSCLK_L 3— — ns DVIO ≥ 2.3V 4.5 — — ns DVIO ≥ 1.7V SCLK High Time tSCLK_H 3— — ns DVIO ≥ 2.3V 4.5 — — ns DVIO ≥ 1.7V Output Valid from SCLK Low tDO —— 9.5 ns DVIO ≥ 3.3V — — 12 ns DVIO ≥ 2.3V — — 16 ns DVIO ≥ 1.7V Quiet time tQUIET 10 — — ns (Note 2) 3-Wire Operation: SDI Valid Setup time tSU_SDIH_CNV 5 — — ns SDI High to CNVST Rising Edge CNVST Pulse Width High Time tCNVH 10 — — ns Output Enable Time tEN — — 10 ns DVIO ≥ 2.3V — — 15 ns DVIO ≥ 1.7V Output Disable Time tDIS — — 15 ns (Note 2) MCP331x1-10 Sample Rate fs — — 1 Msps Throughput rate Input Acquisition Time (Note 2) tACQ 290 250 300 — — ns -40°C ≤ TA ≤ 85°C 85°C < TA ≤ 125°C Data Conversion Time tCNV — — 700 710 750 ns -40°C ≤ TA ≤ 85°C 85°C < TA ≤ 125°C Time between Conversions tCYC 1— — µs tCYC = tACQ + tCNV, fS = 1 Msps MCP331x1-05 Sample Rate fs — — 500 kSPS Throughput rate Input Acquisition Time (Note 2) tACQ 700 800 — ns -40°C ≤ TA ≤ 125°C Data Conversion Time tCNV — 1200 1300 ns -40°C ≤ TA ≤ 125°C Time between Conversions tCYC 2— — µs tCYC = tACQ + tCNV, fS = 500 kSPS Note 1: This parameter is ensured by design and not 100% tested. 2: This parameter is ensured by characterization and not 100% tested. Parameters Symbol Min. Typ. Max. Units Conditions Temperature Ranges Operating Temperature Range TA -40 — +125 °C (Note 1) Storage Temperature Range TA -65 — +150 °C (Note 1) Thermal Package Resistance Thermal Resistance, MSOP-10 JA —202 — °C/W Thermal Resistance, TDFN-10 JA —68— °C/W Note 1: The internal junction temperature (Tj) must not exceed the absolute maximum specification of +150oC. |
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