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DP8428 датащи(PDF) 12 Page - National Semiconductor (TI)

[Old version datasheet] Texas Instruments acquired National semiconductor.
номер детали DP8428
подробное описание детали  1 Megabit High Speed Dynamic RAM Controller/Drivers
PDF  26 Pages
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производитель  NSC [National Semiconductor (TI)]
домашняя страница  http://www.national.com
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DP8428 датащи(HTML) 12 Page - National Semiconductor (TI)

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DP8428DP8429 Mode Descriptions (Continued)
CASIN goes low to access a new memory location (see
Figure 5c ) Parameter tCPdif has been specified in order that
users may easily determine minimum CAS pulse widths
when CASIN is toggling
AUTOMATIC CAS GENERATION
CAS is held high when RC is high even if CASIN is low If
CASIN is low when RC goes low CAS goes low automati-
cally tASC after the column address is valid This feature
eliminates the need for an externally derived CASIN signal
to control CAS when performing a simple access (
Figure 5a
demonstrates Auto-CAS generation in mode 4) Page or nib-
ble accessing may be performed as shown in
Figure 5c
even if CAS is generated automatically for the initial access
FASTEST MEMORY ACCESS
The fastest Mode 4 access is achieved by using the auto-
matic CAS feature and external delay line to generate the
required delay between RASIN and RC The amount of
delay required depends on the minimum tRAH of the DRAMs
being used The DP8429 parameter tDIF1 has been speci-
fied in order that the delay between RASIN and RC may be
minimized
tDIF1 e MAXIMUM (tRPDL -tRHA)
where tRPDL e RASIN to RAS delay
and tRHA e row address held from RC going low
The delay between RASIN and RC that guarantees the
specified DRAM tRAH is given by
MINIMUM RASIN to RC e tDIF1 a tRAH
Example
In an application using DRAMs that require a minimum tRAH
of 15 ns the following demonstrates how the maximum
RASIN to CAS time is determined
With tDIF1 (from Switching Characteristics) e 7 ns
RASIN to RC delay e 7ns a 15 ns e 22 ns
A delay line of 25 ns will be sufficient
With Auto-CAS generation the maximum delay from RC to
CAS (loaded with 600 pF) is 46 ns Thus the maximum
RASIN to CAS time is 71 ns under the given conditions
With a maximum RASIN to RAS time (tRPDL) of 20 ns the
maximum RAS to CAS time is about 51 ns Most DRAMs
with a 15 ns minimum tRAH have a maximum tRCD of about
60 ns Thus memory accesses are likely to be RAS limited
instead of CAS limited In other words memory access time
is limited by DRAM performance not controller perform-
ance
REFRESHING IN CONJUNCTION WITH MODE 4
If using mode 4 to access memory mode 0 (externally con-
trolled refresh) must be used for all refreshing
MODE 5 – AUTOMATIC ACCESS WITH HIDDEN RE-
FRESHING CAPABILITY
Automatic-Access has two advantages over the externally
controlled access (mode 4) First RAS CAS and the row to
column change are all derived internally from one input sig-
nal RASIN Thus the need for an external delay line (see
mode 4) is eliminated
Secondly since RC and CASIN are not needed to gener-
ate the row to column change and CAS these pins can be
used for the automatic refreshing function
AUTOMATIC ACCESS CONTROL
Mode 5 of the DP8429 makes accessing Dynamic RAM
nearly as easy as accessing static RAM Once row and col-
umn addresses are valid (latched on the DP8429 if neces-
sary) RASIN going low is all that is required to perform the
memory access
TLF8649 – 19
FIGURE 5c Page or Nibble Access in Mode 4
12



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