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DP8428 датащи(PDF) 12 Page - National Semiconductor (TI) |
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DP8428 датащи(HTML) 12 Page - National Semiconductor (TI) |
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12 / 26 page ![]() DP8428DP8429 Mode Descriptions (Continued) CASIN goes low to access a new memory location (see Figure 5c ) Parameter tCPdif has been specified in order that users may easily determine minimum CAS pulse widths when CASIN is toggling AUTOMATIC CAS GENERATION CAS is held high when RC is high even if CASIN is low If CASIN is low when RC goes low CAS goes low automati- cally tASC after the column address is valid This feature eliminates the need for an externally derived CASIN signal to control CAS when performing a simple access ( Figure 5a demonstrates Auto-CAS generation in mode 4) Page or nib- ble accessing may be performed as shown in Figure 5c even if CAS is generated automatically for the initial access FASTEST MEMORY ACCESS The fastest Mode 4 access is achieved by using the auto- matic CAS feature and external delay line to generate the required delay between RASIN and RC The amount of delay required depends on the minimum tRAH of the DRAMs being used The DP8429 parameter tDIF1 has been speci- fied in order that the delay between RASIN and RC may be minimized tDIF1 e MAXIMUM (tRPDL -tRHA) where tRPDL e RASIN to RAS delay and tRHA e row address held from RC going low The delay between RASIN and RC that guarantees the specified DRAM tRAH is given by MINIMUM RASIN to RC e tDIF1 a tRAH Example In an application using DRAMs that require a minimum tRAH of 15 ns the following demonstrates how the maximum RASIN to CAS time is determined With tDIF1 (from Switching Characteristics) e 7 ns RASIN to RC delay e 7ns a 15 ns e 22 ns A delay line of 25 ns will be sufficient With Auto-CAS generation the maximum delay from RC to CAS (loaded with 600 pF) is 46 ns Thus the maximum RASIN to CAS time is 71 ns under the given conditions With a maximum RASIN to RAS time (tRPDL) of 20 ns the maximum RAS to CAS time is about 51 ns Most DRAMs with a 15 ns minimum tRAH have a maximum tRCD of about 60 ns Thus memory accesses are likely to be RAS limited instead of CAS limited In other words memory access time is limited by DRAM performance not controller perform- ance REFRESHING IN CONJUNCTION WITH MODE 4 If using mode 4 to access memory mode 0 (externally con- trolled refresh) must be used for all refreshing MODE 5 – AUTOMATIC ACCESS WITH HIDDEN RE- FRESHING CAPABILITY Automatic-Access has two advantages over the externally controlled access (mode 4) First RAS CAS and the row to column change are all derived internally from one input sig- nal RASIN Thus the need for an external delay line (see mode 4) is eliminated Secondly since RC and CASIN are not needed to gener- ate the row to column change and CAS these pins can be used for the automatic refreshing function AUTOMATIC ACCESS CONTROL Mode 5 of the DP8429 makes accessing Dynamic RAM nearly as easy as accessing static RAM Once row and col- umn addresses are valid (latched on the DP8429 if neces- sary) RASIN going low is all that is required to perform the memory access TLF8649 – 19 FIGURE 5c Page or Nibble Access in Mode 4 12 |
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