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STW12N170K5 датащи(PDF) 4 Page - STMicroelectronics

номер детали STW12N170K5
подробное описание детали  N-channel 1700 V, 2.3 Ω typ., 5 A, MDmesh™K5 Power MOSFET in a TO??47 package
PDF  14 Pages
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производитель  STMICROELECTRONICS [STMicroelectronics]
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Table 7. Source drain diode
Symbol
Parameter
Test conditions
Min.
Typ.
Max.
Unit
ISD
Source-drain current
-
5
A
ISDM
Source-drain current (pulsed)
-
10
A
VSD(1)
Forward on voltage
ISD = 5 A, VGS = 0 V
-
1.5
V
trr
Reverse recovery time
ISD = 5 A, VDD = 60 V,
di/dt = 100 A/µs
(see Figure 16. Test circuit for
inductive load switching and diode
recovery times)
-
350
ns
Qrr
Reverse recovery charge
-
3.91
µC
IRRM
Reverse recovery current
-
22.3
A
trr
Reverse recovery time
ISD = 5 A,VDD = 60 V,
di/dt = 100 A/µs, TJ = 150 °C
(see Figure 16. Test circuit for
inductive load switching and diode
recovery times)
-
481
ns
Qrr
Reverse recovery charge
-
5.07
µC
IRRM
Reverse recovery current
-
21.0
A
1. Pulsed: pulse duration = 300µs, duty cycle 1.5%
Table 8. Gate-source Zener diode
Symbol
Parameter
Test conditions
Min.
Typ.
Max.
Unit
V(BR)GSO
Gate-source breakdown voltage
IGS = ±1 mA, ID = 0 A
30
-
V
The built-in back-to-back Zener diodes are specifically designed to enhance the ESD performance of the device.
The Zener voltage facilitates efficient and cost-effective device integrity protection, thus eliminating the need for
additional external componentry.
STW12N170K5
Electrical characteristics
DS12847 - Rev 1
page 4/14



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