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STW12N170K5 датащи(PDF) 5 Page - STMicroelectronics

номер детали STW12N170K5
подробное описание детали  N-channel 1700 V, 2.3 Ω typ., 5 A, MDmesh™K5 Power MOSFET in a TO??47 package
PDF  14 Pages
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производитель  STMICROELECTRONICS [STMicroelectronics]
домашняя страница  http://www.st.com
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STW12N170K5 датащи(HTML) 5 Page - STMicroelectronics

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2.1
Electrical characteristics (curves)
Figure 1. Safe operating area
GADG191120181151SOA
10 1
10 0
10 -1
10 -1
10 0
10 1
10 2
10 3
ID
(A)
VDS (V)
tp =10 µs
tp =100 µs
tp =1 ms
tp =10 ms
Operation in this area
is limited by RDS(on)
Single pulse, TC = 25 °C,
TJ ≤ 150 °C, VGS = 10 V
Operation in this area
is limited by RDS(on)
Figure 2. Thermal impedance
Figure 3. Output characteristics
GADG191120181130OCH
8
7
6
5
4
3
2
1
0
0
6
12
18
24
30
ID
(A)
VDS (V)
VGS = 9, 10 V
VGS = 8 V
VGS = 7 V
VGS = 6 V
Figure 4. Transfer characteristics
GADG211120180929TCH
8
7
6
5
4
3
2
1
0
2
3
4
5
6
7
8
9
ID
(A)
VGS (V)
VDS = 20 V
Figure 5. Gate charge vs gate-source voltage
GADG191120181138QVG
1200
1000
800
600
400
200
0
12
10
8
6
4
2
0
0
6
12
18
24
30
36
VDS
(V)
VGS
(V)
Qg (nC)
VDS
VDD = 1360 V, ID = 5 A
Qgd
Qg
Figure 6. Static drain-source on-resistance
GADG191120181132RID
2.40
2.35
2.30
2.25
2.20
0
1
2
3
4
5
RDS(on)
(Ω)
ID (A)
VGS = 10 V
STW12N170K5
Electrical characteristics (curves)
DS12847 - Rev 1
page 5/14



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