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STW12N170K5 датащи(PDF) 1 Page - STMicroelectronics |
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STW12N170K5 датащи(HTML) 1 Page - STMicroelectronics |
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1 / 14 page ![]() TO-247 1 2 3 D(2, TAB) G(1) S(3) AM01475V1 Features Order code VDS RDS(on) max. ID PTOT STW12N170K5 1700 V 2.9 Ω 5 A 250 W • Industry’s lowest RDS(on) x area • Industry’s best FoM (figure of merit) • Ultra-low gate charge • 100% avalanche tested • Zener-protected Applications • Switching applications Description This very high voltage N-channel Power MOSFET is designed using MDmesh™ K5 technology based on an innovative proprietary vertical structure. The result is a dramatic reduction in on-resistance and ultra-low gate charge for applications requiring superior power density and high efficiency. Product status link STW12N170K5 Product summary Order code STW12N170K5 Marking 12N170K5 Package TO-247 Packing Tube N-channel 1700 V, 2.3 Ω typ., 5 A, MDmesh™ K5 Power MOSFET in a TO ‑247 package STW12N170K5 Datasheet DS12847 - Rev 1 - November 2018 For further information contact your local STMicroelectronics sales office. www.st.com |
Аналогичный номер детали - STW12N170K5 |
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Аналогичное описание - STW12N170K5 |
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