STW12N170K5 datasheet(6/14 Pages) STMICROELECTRONICS

номер детали	STW12N170K5

подробное описание детали	N-channel 1700 V, 2.3 Ω typ., 5 A, MDmesh™K5 Power MOSFET in a TO??47 package

PDF	14 Pages

Scroll/Zoom	100%

производитель	STMICROELECTRONICS [STMicroelectronics]

домашняя страница	http://www.st.com

Logo

6 / 14 page

Figure 7. Normalized gate threshold voltage vs

temperature

GADG191120181133VTH

1.1

1.0

0.9

0.8

0.7

0.6

-75

-25

125

VGS(th)

(norm.)

Tj (°C)

ID = 100 µA

Figure 8. Normalized on-resistance vs temperature

GADG191120181133RON

2.2

1.8

1.4

1.0

0.6

0.2

-75

-25

125

RDS(on)

(norm.)

Tj (°C)

VGS = 10 V

Figure 9. Normalized V(BR)DSS vs temperature

GADG191120181133BDV

1.08

1.04

1.00

0.96

0.92

0.88

-75

-25

125

V(BR)DSS

(norm.)

Tj (°C)

ID = 1 mA

Figure 10. Source-drain diode forward characteristics

GADG191120181131SDF

1.0

0.9

0.8

0.7

0.6

0.5

VSD

(V)

ISD (A)

TJ = 150 °C

TJ = 25 °C

TJ = -50 °C

Figure 11. Capacitance variations

GADG201120181046CVR

10 4

10 3

10 2

10 1

10 0

10 -1

10 0

10 1

10 2

10 3

(pF)

VDS (V)

CISS

COSS

CRSS

f = 1 MHz

Figure 12. Maximum avalanche energy vs TJ

GADG201120181049EAS

1000

800

600

400

200

-50

100

EAS

(mJ)

TJ (°C)

Single pulse,

ID = 1.7 A, VDD = 50 V

STW12N170K5

Electrical characteristics (curves)

DS12847 - Rev 1

page 6/14

STW12N170K5 датащи(PDF) 6 Page - STMicroelectronics

STW12N170K5 датащи(HTML) 6 Page - STMicroelectronics

Html Pages

1 2 3 4 5 6 7 8 9 10 11 12 13 14

датащи скачать

ссылки URL