STM32WL55JC datasheet(90/145 Pages) STMICROELECTRONICS

номер детали	STM32WL55JC

подробное описание детали	Multiprotocol LPWAN dual core 32-bit Arm® Cortex®-M4/M0 LoRa®, (G)FSK, (G)MSK, BPSK, up to 256KB Flash, 64KB SRAM

PDF	145 Pages

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производитель	STMICROELECTRONICS [STMicroelectronics]

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Table 51. Current consumption in Standby mode

Symbol

Parameter

Conditions

Typ

Max(1)

Unit

VDD

(V)

0 °C

25 °C

55 °C

85 °C

105 °C

0 °C

25 °C

85 °C

105 °C

IDD

(Standby)

Supply current in

Standby mode

RTC disabled

Backup registers

retained

No retention

1.8

0.009

0.027

0.245

1.00

2.40

µA

2.4

0.022

0.051

0.340

1.35

2.85

3.0

0.046

0.071

0.470

1.75

3.40

3.6

0.075

0.125

0.650

2.30

4.05

SRAM2 retained

1.8

0.130

0.205

0.820

2.90

5.55

0.200

0.550

8.20

24.0

2.4

0.140

0.225

0.915

3.25

6.05

3.0

0.165

0.255

1.05

3.70

6.60

0.280

0.710

9.40

27.0

3.6

0.190

0.300

1.20

4.25

7.25

0.330

0.770

10.0

28.0

IDD

(Standby

with RTC)

Supply current in

Standby mode

(backup registers

and SRAM2

retained)

RTC enabled

RTC clocked by LSI

(PREDIV = 1)

1.8

0.215

0.295

0.895

3.10

5.30

2.4

0.230

0.325

0.990

3.45

5.95

3.0

0.260

0.360

1.15

3.95

6.85

3.6

0.305

0.425

1.30

4.55

7.85

RTC clocked by LSE

quartz(2) in low drive

mode

1.8

0.270

0.350

0.975

3.15

5.80

2.4

0.295

0.390

1.10

3.50

6.25

3.0

0.345

0.445

1.25

4.00

6.85

3.6

0.415

0.535

1.45

4.60

7.55

1. Guaranteed by characterization results, unless otherwise specified.

2. Based on characterization done with a 32.768 kHz crystal (MC306-G-06Q-32.768, manufacturer JFVNY) with two 6.8 pF loading capacitors.

Table 52. Current consumption during wakeup from Standby mode

Symbol

Conditions

Typ at 25 °C

Unit

VDD = 1.8 V

VDD = 2.4 V

VDD = 3.0 V

VDD = 3.6 V

IDD (wakeup from Standby)

Wakeup clock: MSI 4 MHz

23.5

81.3

111

114

nAs

Wakeup clock: MSI 8 MHz

15.2

15.7

17.3

19.6

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