7 Specifications

7.1 Absolute Maximum Ratings

Over operating free-air temperature range (unless otherwise noted).(1)

MIN

MAX

UNIT

Supply voltage

40 (±20)

V

Input voltage

Vs ± 0.5

V

Output short-circuit (to ground)

Continuous

Operating ambient temperature

–40

125

°C

Junction temperature

150

°C

Storage temperature

–65

150

°C

(1)

Stresses beyond those listed under Absolute Maximum Rating may cause permanent damage to the device. These are stress ratings

only, which do not imply functional operation of the device at these or any other conditions beyond those indicated under

Recommended Operating Condition. Exposure to absolute-maximum-rated conditions for extended periods may affect device

reliability.

7.2 ESD Ratings

VALUE

UNIT

Electrostatic discharge

Human body model (HBM), per ANSI/ESDA/JEDEC JS-001(1)

±3000

V

Charged device model (CDM), per JEDEC specification JESD22-C101(2)

±1000

(1)

JEDEC document JEP155 states that 500-V HBM allows safe manufacturing with a standard ESD control process.

(2)

JEDEC document JEP157 states that 250-V CDM allows safe manufacturing with a standard ESD control process.

7.3 Recommended Operating Conditions

Over operating free-air temperature range (unless otherwise noted).

MIN

NOM

MAX

UNIT

Supply voltage

±2.25

±15

±18

V

Ambient temperature

–40

25

125(1)

°C

(1)

7.4 Thermal Information

THERMAL METRIC(1)

BUF634A

UNIT

D (SOIC)

DRB (VSON)

DDA (HSOIC)

8 PINS

8 PINS

8 PINS

Junction-to-ambient thermal resistance

122.9

50.5

41.3

°C/W

Junction-to-case (top) thermal resistance

55.2

60

57.1

°C/W

Junction-to-board thermal resistance

68.4

23.6

17.0

°C/W

Junction-to-top characterization parameter

12.1

1.5

4.6

°C/W

Junction-to-board characterization parameter

67.2

23.6

17.0

°C/W

Junction-to-case (bottom) thermal resistance

NA

6.9

5.3

°C/W

(1)

For more information about traditional and new thermal metrics, see the Semiconductor and IC Package Thermal Metrics application

report.

BUF634A

SBOS948D – FEBRUARY 2019 – REVISED SEPTEMBER 2020

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